Kopsavilkums
The GW approach of many-body perturbation theory has become a common tool for calculating the electronic structure of materials. However, with increasing number of published results, discrepancies between the values obtained by different methods and codes become more and more apparent. For a test set of small- and wide-gap semiconductors, we demonstrate how to reach the numerically best electronic structure within the framework of the full-potential linearized augmented plane-wave (FLAPW) method. We first evaluate the impact of local orbitals in the Kohn-Sham eigenvalue spectrum of the underlying starting point. The role of the basis-set quality is then further analyzed when calculating the G0W0 quasiparticle energies. Our results, computed with the exciting code, are compared to those obtained using the projector-augmented plane-wave formalism, finding overall good agreement between both methods. We also provide data produced with a typical FLAPW basis set as a benchmark for other G0W0 implementations.
| Oriģinālvaloda | Angļu |
|---|---|
| Raksta numurs | 035118 |
| Žurnāls | Physical Review B |
| Sējums | 94 |
| Izdevuma numurs | 3 |
| DOIs | |
| Publikācijas statuss | Publicēts - 7 jūl. 2016 |
| Ārēji publicēts | Jā |
OECD Zinātnes nozare
- 1.3 Fizika un astronomija
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