Barium metaplumbate thin film electrodes for ferroelectric devices

A. I. Mardare; C. C. Mardare; E. Joanni; J. R.A. Fernandes; P. M. Vilarinho; A. L. Kholkin

doi:10.1080/00150190390238388

Barium metaplumbate thin film electrodes for ferroelectric devices

A. I. Mardare^*
, C. C. Mardare
, E. Joanni
, J. R.A. Fernandes
, P. M. Vilarinho
, A. L. Kholkin

^*Šī darba korespondējošais autors

University of Porto
Universidade de Trás-os-Montes e Alto Douro
University of Aveiro

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

2 Atsauces (Scopus)

Kopsavilkums

Barium metaplumbate thin films were deposited in situ by pulsed laser deposition on Si/SiO 2 and Si/SiO 2 /Ti/Pt substrates between 400C and 700C. Films prepared at low temperature ( ≤ 500C) over platinum were randomly oriented. For depositions made at 2 × 10 ^-2 mbar of oxygen, the films were oriented (110) for all temperatures, while at 0.1 mbar the films were oriented (110) at 500C, changing to a mixed (222)/(200) orientation above 550C. The conductivity of BaPbO 3 reached values of 5.6 × 10^-5 ω cm. The films deposited directly over silica were polycrystalline for temperatures above 500C, having a strong (110) orientation only at 700C. The orientation of BaPbO 3 deposited either on silica or platinum, was reflected on the PZT films deposited at room temperature over BaPbO 3 and crystallized by different thermal treatments. PZT capacitors made over BaPbO 3 presented high values of remnant polarization (up to 44 μ C/cm 2 ).

Oriģinālvaloda	Angļu
Lapas (no-līdz)	177-188
Lapu skaits	12
Žurnāls	Ferroelectrics
Sējums	293
DOIs	https://doi.org/10.1080/00150190390238388
Publikācijas statuss	Publicēts - 1 jūn. 2003
Ārēji publicēts	Jā

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title = "Barium metaplumbate thin film electrodes for ferroelectric devices",

abstract = "Barium metaplumbate thin films were deposited in situ by pulsed laser deposition on Si/SiO 2 and Si/SiO 2 /Ti/Pt substrates between 400C and 700C. Films prepared at low temperature ( ≤ 500C) over platinum were randomly oriented. For depositions made at 2 × 10 -2 mbar of oxygen, the films were oriented (110) for all temperatures, while at 0.1 mbar the films were oriented (110) at 500C, changing to a mixed (222)/(200) orientation above 550C. The conductivity of BaPbO 3 reached values of 5.6 × 10-5 ω cm. The films deposited directly over silica were polycrystalline for temperatures above 500C, having a strong (110) orientation only at 700C. The orientation of BaPbO 3 deposited either on silica or platinum, was reflected on the PZT films deposited at room temperature over BaPbO 3 and crystallized by different thermal treatments. PZT capacitors made over BaPbO 3 presented high values of remnant polarization (up to 44 μ C/cm 2 ).",

keywords = "Capacitors, Conductive oxides, Electrodes, Ferroelectric properties, Laser ablation, Thin films",

author = "Mardare, \{A. I.\} and Mardare, \{C. C.\} and E. Joanni and Fernandes, \{J. R.A.\} and Vilarinho, \{P. M.\} and Kholkin, \{A. L.\}",

year = "2003",

month = jun,

day = "1",

doi = "10.1080/00150190390238388",

language = "English",

volume = "293",

pages = "177--188",

journal = "Ferroelectrics",

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publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - Barium metaplumbate thin film electrodes for ferroelectric devices

AU - Mardare, A. I.

AU - Mardare, C. C.

AU - Joanni, E.

AU - Fernandes, J. R.A.

AU - Vilarinho, P. M.

AU - Kholkin, A. L.

PY - 2003/6/1

Y1 - 2003/6/1

N2 - Barium metaplumbate thin films were deposited in situ by pulsed laser deposition on Si/SiO 2 and Si/SiO 2 /Ti/Pt substrates between 400C and 700C. Films prepared at low temperature ( ≤ 500C) over platinum were randomly oriented. For depositions made at 2 × 10 -2 mbar of oxygen, the films were oriented (110) for all temperatures, while at 0.1 mbar the films were oriented (110) at 500C, changing to a mixed (222)/(200) orientation above 550C. The conductivity of BaPbO 3 reached values of 5.6 × 10-5 ω cm. The films deposited directly over silica were polycrystalline for temperatures above 500C, having a strong (110) orientation only at 700C. The orientation of BaPbO 3 deposited either on silica or platinum, was reflected on the PZT films deposited at room temperature over BaPbO 3 and crystallized by different thermal treatments. PZT capacitors made over BaPbO 3 presented high values of remnant polarization (up to 44 μ C/cm 2 ).

AB - Barium metaplumbate thin films were deposited in situ by pulsed laser deposition on Si/SiO 2 and Si/SiO 2 /Ti/Pt substrates between 400C and 700C. Films prepared at low temperature ( ≤ 500C) over platinum were randomly oriented. For depositions made at 2 × 10 -2 mbar of oxygen, the films were oriented (110) for all temperatures, while at 0.1 mbar the films were oriented (110) at 500C, changing to a mixed (222)/(200) orientation above 550C. The conductivity of BaPbO 3 reached values of 5.6 × 10-5 ω cm. The films deposited directly over silica were polycrystalline for temperatures above 500C, having a strong (110) orientation only at 700C. The orientation of BaPbO 3 deposited either on silica or platinum, was reflected on the PZT films deposited at room temperature over BaPbO 3 and crystallized by different thermal treatments. PZT capacitors made over BaPbO 3 presented high values of remnant polarization (up to 44 μ C/cm 2 ).

KW - Capacitors

KW - Conductive oxides

KW - Electrodes

KW - Ferroelectric properties

KW - Laser ablation

KW - Thin films

UR - https://www.scopus.com/pages/publications/33746314855

U2 - 10.1080/00150190390238388

DO - 10.1080/00150190390238388

M3 - Article

AN - SCOPUS:33746314855

SN - 0015-0193

VL - 293

SP - 177

EP - 188

JO - Ferroelectrics

JF - Ferroelectrics

ER -

Barium metaplumbate thin film electrodes for ferroelectric devices

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