@inproceedings{c8496eb3f2384a449ea9b5ceacc603ad,
title = "Characterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD technique",
abstract = "Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.",
keywords = "Crystal structure, Gallium oxide, MOCVD, Sapphire, Trimethylgallium, Water",
author = "Alvars Kjapsna and Lauris Dimitrocenko and Ivars Tale and Anatoly Trukhin and Reinis Ignatans and Rolands Grants",
note = "Publisher Copyright: {\textcopyright} 2017 Trans Tech Publications.; 25th International Baltic Conference of Engineering Materials and Tribology – BALTMATTRIB ; Conference date: 03-11-2016 Through 04-11-2016",
year = "2017",
doi = "10.4028/www.scientific.net/KEM.721.253",
language = "English",
isbn = "9783035710724",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications Ltd",
pages = "253--257",
booktitle = "Engineering Materials and Tribology XXV",
address = "Switzerland",
}