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Characterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in situ methods

  • University of Latvia
  • University College Cork

Zinātniskās darbības rezultāts: Nodaļa grāmatā/enciklopēdijā/konferences krājumāKonferences zinātniskais rakstsPētniecībakoleģiāli recenzēts

1 Atsauce (Scopus)

Kopsavilkums

Conductive AFM and in situ methods were used to determine contact resistance and resistivity of individual Sb2S3 nanowires. Nanowires were deposited on oxidized Si surface for in situ measurements and on Si surface with macroelectrodes for conductive AFM (C-AFM) measurements. Contact resistance was determined by measurement of I(V) characteristics at different distances from the nanowire contact with the macroelectrode and resistivity of nanowires was determined. Sb2S3 is a soft material with low adhesion force to the surface and therefore special precautions were taken during measurements.

OriģinālvalodaAngļu
Rīkotāja publikācijas nosaukumsGlobal Research and Education
Lapas106-109
Lapu skaits4
DOIs
Publikācijas statussPublicēts - 2011
Pasākums9th International Conference on Global Research and Education, INTER-ACADEMIA 2010 - Riga, Latvija
Ilgums: 9 aug. 201012 aug. 2010

Publikāciju sērijas

NosaukumsAdvanced Materials Research
Sējums222
ISSN (Drukātā versija)1022-6680

Konference

Konference9th International Conference on Global Research and Education, INTER-ACADEMIA 2010
Valsts/TeritorijaLatvija
PilsētaRiga
Periods9/08/1012/08/10

Nospiedums

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