Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors

S. Zh Karazhanov

doi:10.1134/1.1262787

Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors

S. Zh Karazhanov^*

^*Šī darba korespondējošais autors

Academy of Sciences of the Republic of Uzbekistan

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

Kopsavilkums

The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is non-monotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	187-189
Lapu skaits	3
Žurnāls	Technical Physics Letters
Sējums	26
Izdevuma numurs	3
DOIs	https://doi.org/10.1134/1.1262787
Publikācijas statuss	Publicēts - marts 2000
Ārēji publicēts	Jā

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abstract = "The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is non-monotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity.",

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AB - The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is non-monotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity.

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DO - 10.1134/1.1262787

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JO - Technical Physics Letters

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Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors

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