TY - GEN
T1 - Complex dielectric function in lead-free NKN films
AU - Schwarz, R.
AU - Ayouchi, R.
AU - Bhattacharyya, S. R.
AU - Leal, M.
AU - Mardolcar, U.
AU - Santos, L.
AU - Bdikin, I.
AU - Rai, R.
AU - Coondoo, I.
AU - Kholkin, A.
PY - 2012
Y1 - 2012
N2 - We use optical transmission spectroscopy and spectral ellipsometry (SE) to determine the real and imaginary part of the complex dielectric function in both ceramic samples and thin films of lead-free Na xK 1-xNbO 3 (NKN). Thin films of NKN were prepared by pulsed laser deposition (PLD) from ceramic NKN targets. The optical band gap from transmission measurements in thin films yield an optical band gap of 3.94 or 3.55 eV, depending on whether direct or indirect transitions, respectively, are assumed. The fit procedure of SE results, based on the Tauc-Lorentz model, resulted in a band gap for films of 3.66 eV, whereas the band gap of the thick ceramic samples was 3.79 eV. Examples of amorphous and highly polycrystalline thin films, deposited at 450 and 600°C, respectively, are discussed.
AB - We use optical transmission spectroscopy and spectral ellipsometry (SE) to determine the real and imaginary part of the complex dielectric function in both ceramic samples and thin films of lead-free Na xK 1-xNbO 3 (NKN). Thin films of NKN were prepared by pulsed laser deposition (PLD) from ceramic NKN targets. The optical band gap from transmission measurements in thin films yield an optical band gap of 3.94 or 3.55 eV, depending on whether direct or indirect transitions, respectively, are assumed. The fit procedure of SE results, based on the Tauc-Lorentz model, resulted in a band gap for films of 3.66 eV, whereas the band gap of the thick ceramic samples was 3.79 eV. Examples of amorphous and highly polycrystalline thin films, deposited at 450 and 600°C, respectively, are discussed.
KW - Dielectric function
KW - NKN
KW - PLD
KW - spectral ellipsometry
KW - thin film
UR - https://www.scopus.com/pages/publications/84867903810
U2 - 10.1109/ISAF.2012.6297716
DO - 10.1109/ISAF.2012.6297716
M3 - Conference paper
AN - SCOPUS:84867903810
SN - 9781467326681
T3 - Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012
BT - Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012
T2 - 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM
Y2 - 9 July 2012 through 13 July 2012
ER -