Kopsavilkums
Dielectric properties of epitaxial relaxor ferroelectric thin-film heterostructures were experimentally studied in a broad range of temperature, frequency, and amplitude of ac-field. Contribution of the film-electrode interfaces to the properties of the heterostructures was evaluated and the true properties of the films were reconstructed and analyzed. In the films, the Vögel-Fulcher relationship, deviation from Curie-Weiss behavior, temperature evolution of local order parameter, relaxation-time spectrum, and dielectric nonlinearity were found to be essentially similar to those in bulk relaxor ferroelectrics.
| Oriģinālvaloda | Angļu |
|---|---|
| Lapas (no-līdz) | 235-240 |
| Lapu skaits | 6 |
| Žurnāls | Ferroelectrics |
| Sējums | 270 |
| DOIs | |
| Publikācijas statuss | Publicēts - 1 janv. 2002 |
Nospiedums
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