Dielectric response of Ba0.75Sr0.25TiO3 epitaxial films to electric field and temperature

Yu A. Boǐkov; D. Erts; T. Claeson; A. Yu Boǐkov

doi:10.1134/1.1521473

Dielectric response of Ba_0.75Sr_0.25TiO₃ epitaxial films to electric field and temperature

Yu A. Boǐkov^*
, D. Erts
, T. Claeson
, A. Yu Boǐkov

^*Šī darba korespondējošais autors

Ioffe Physico-Technical Institute
Chalmers University of Technology
St. Petersburg State University

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

4 Atsauces (Scopus)

Kopsavilkums

The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO₃ ∥ (100)Ba_0.75Sr_0.25TiO₃ ∥ (001)SrRO₃ heterostructure grown by laser ablation on (001)La_0.294Sr_0.706Al_0.647Ta_0.353O ₃ were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba_0.75Sr_0.25TiO₃ layer increased approximately linearly with decreasing temperature in the interval 320-200 K. The real part-of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ε′/ε₀ = 4400 at T_M≈ 285 K (f = 100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba_0.75Sr_0.25TiO₃ ferroelectric layer, observed for T < T_M, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	2157-2164
Lapu skaits	8
Žurnāls	Physics of the Solid State
Sējums	44
Izdevuma numurs	11
DOIs	https://doi.org/10.1134/1.1521473
Publikācijas statuss	Publicēts - 1 nov. 2002
Ārēji publicēts	Jā

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title = "Dielectric response of Ba0.75Sr0.25TiO3 epitaxial films to electric field and temperature",

abstract = "The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO3 ∥ (100)Ba0.75Sr0.25TiO3 ∥ (001)SrRO3 heterostructure grown by laser ablation on (001)La0.294Sr0.706Al0.647Ta0.353O 3 were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba0.75Sr0.25TiO3 layer increased approximately linearly with decreasing temperature in the interval 320-200 K. The real part-of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ε′/ε0 = 4400 at TM≈ 285 K (f = 100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba0.75Sr0.25TiO3 ferroelectric layer, observed for T < TM, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.",

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T1 - Dielectric response of Ba0.75Sr0.25TiO3 epitaxial films to electric field and temperature

AU - Boǐkov, Yu A.

AU - Erts, D.

AU - Claeson, T.

AU - Boǐkov, A. Yu

PY - 2002/11/1

Y1 - 2002/11/1

N2 - The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO3 ∥ (100)Ba0.75Sr0.25TiO3 ∥ (001)SrRO3 heterostructure grown by laser ablation on (001)La0.294Sr0.706Al0.647Ta0.353O 3 were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba0.75Sr0.25TiO3 layer increased approximately linearly with decreasing temperature in the interval 320-200 K. The real part-of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ε′/ε0 = 4400 at TM≈ 285 K (f = 100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba0.75Sr0.25TiO3 ferroelectric layer, observed for T < TM, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.

AB - The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO3 ∥ (100)Ba0.75Sr0.25TiO3 ∥ (001)SrRO3 heterostructure grown by laser ablation on (001)La0.294Sr0.706Al0.647Ta0.353O 3 were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba0.75Sr0.25TiO3 layer increased approximately linearly with decreasing temperature in the interval 320-200 K. The real part-of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ε′/ε0 = 4400 at TM≈ 285 K (f = 100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba0.75Sr0.25TiO3 ferroelectric layer, observed for T < TM, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.

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