Electrochromism in tungsten oxyfluoride films made by chemically enhanced dc sputtering

A. Azens; B. Stjerna; C. G. Granqvist; J. Gabrusenoks; A. Lusis

doi:10.1063/1.112842

Electrochromism in tungsten oxyfluoride films made by chemically enhanced dc sputtering

A. Azens^*
, B. Stjerna
, C. G. Granqvist
, J. Gabrusenoks
, A. Lusis

^*Šī darba korespondējošais autors

Uppsala University

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

17 Atsauces (Scopus)

Kopsavilkums

Tungsten oxyfluoride films were prepared by reactive dc sputtering in plasmas containing O₂+CF₄ The deposition rate was large, particularly when chemical sputtering was promoted by heating the target. The films could show large charge insertion/extraction and high coloration efficiency.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	1998-2000
Lapu skaits	3
Žurnāls	Applied Physics Letters
Sējums	65
Izdevuma numurs	16
DOIs	https://doi.org/10.1063/1.112842
Publikācijas statuss	Publicēts - 1994

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title = "Electrochromism in tungsten oxyfluoride films made by chemically enhanced dc sputtering",

abstract = "Tungsten oxyfluoride films were prepared by reactive dc sputtering in plasmas containing O2+CF4 The deposition rate was large, particularly when chemical sputtering was promoted by heating the target. The films could show large charge insertion/extraction and high coloration efficiency.",

author = "A. Azens and B. Stjerna and Granqvist, \{C. G.\} and J. Gabrusenoks and A. Lusis",

year = "1994",

doi = "10.1063/1.112842",

language = "English",

volume = "65",

pages = "1998--2000",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

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T1 - Electrochromism in tungsten oxyfluoride films made by chemically enhanced dc sputtering

AU - Azens, A.

AU - Stjerna, B.

AU - Granqvist, C. G.

AU - Gabrusenoks, J.

AU - Lusis, A.

PY - 1994

Y1 - 1994

N2 - Tungsten oxyfluoride films were prepared by reactive dc sputtering in plasmas containing O2+CF4 The deposition rate was large, particularly when chemical sputtering was promoted by heating the target. The films could show large charge insertion/extraction and high coloration efficiency.

AB - Tungsten oxyfluoride films were prepared by reactive dc sputtering in plasmas containing O2+CF4 The deposition rate was large, particularly when chemical sputtering was promoted by heating the target. The films could show large charge insertion/extraction and high coloration efficiency.

UR - https://www.scopus.com/pages/publications/0028523522

U2 - 10.1063/1.112842

DO - 10.1063/1.112842

M3 - Article

AN - SCOPUS:0028523522

SN - 0003-6951

VL - 65

SP - 1998

EP - 2000

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Electrochromism in tungsten oxyfluoride films made by chemically enhanced dc sputtering

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