Electromechanical properties of SrBi2Ta2O9 thin films

A. L. Kholkin; K. G. Brooks; N. Setter

doi:10.1063/1.119782

Electromechanical properties of SrBi₂Ta₂O₉ thin films

A. L. Kholkin^*
, K. G. Brooks
, N. Setter

^*Šī darba korespondējošais autors

Swiss Federal Institute of Technology Lausanne
Rutgers - The State University of New Jersey, New Brunswick

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

89 Atsauces (Scopus)

Kopsavilkums

Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi₂Ta₂O₉ (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 μC/cm² and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5 · 10^-4 was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 10⁹ switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m⁴/C². The electromechanical behavior of SBT films suggested no or weak contribution of non-180° domain walls to the strain response.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	2044-2046
Lapu skaits	3
Žurnāls	Applied Physics Letters
Sējums	71
Izdevuma numurs	14
DOIs	https://doi.org/10.1063/1.119782
Publikācijas statuss	Publicēts - 6 okt. 1997
Ārēji publicēts	Jā

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@article{f7da0bf346e14d569046c4d617887758,

title = "Electromechanical properties of SrBi2Ta2O9 thin films",

abstract = "Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi2Ta2O9 (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 μC/cm2 and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5 · 10-4 was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 109 switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m4/C2. The electromechanical behavior of SBT films suggested no or weak contribution of non-180° domain walls to the strain response.",

author = "Kholkin, \{A. L.\} and Brooks, \{K. G.\} and N. Setter",

year = "1997",

month = oct,

day = "6",

doi = "10.1063/1.119782",

language = "English",

volume = "71",

pages = "2044--2046",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Electromechanical properties of SrBi2Ta2O9 thin films

AU - Kholkin, A. L.

AU - Brooks, K. G.

AU - Setter, N.

PY - 1997/10/6

Y1 - 1997/10/6

N2 - Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi2Ta2O9 (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 μC/cm2 and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5 · 10-4 was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 109 switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m4/C2. The electromechanical behavior of SBT films suggested no or weak contribution of non-180° domain walls to the strain response.

AB - Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi2Ta2O9 (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 μC/cm2 and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5 · 10-4 was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 109 switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m4/C2. The electromechanical behavior of SBT films suggested no or weak contribution of non-180° domain walls to the strain response.

UR - https://www.scopus.com/pages/publications/0001175356

U2 - 10.1063/1.119782

DO - 10.1063/1.119782

M3 - Article

AN - SCOPUS:0001175356

SN - 0003-6951

VL - 71

SP - 2044

EP - 2046

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -