Pāriet uz galveno navigāciju Pāriet uz meklēšanu Pāriet uz galveno saturu

Electronic structure and band parameters for ZnX (X = O, S, Se, Te)

  • S. Zh Karazhanov
  • , P. Ravindran*
  • , A. Kjekhus
  • , H. Fjellvåg
  • , U. Grossner
  • , B. G. Svensson
  • *Šī darba korespondējošais autors
  • University of Oslo
  • Academy of Sciences of the Republic of Uzbekistan

Zinātniskās darbības rezultāts: Devums žurnālamKonferences zinātniskais rakstskoleģiāli recenzēts

67 Atsauces (Scopus)

Kopsavilkums

First-principles density-functional calculations have been performed for zinc monochalcogenides with zinc-blende- and wurtzite-type structures. It is shown that the local-density approximation underestimates the band gap, misplaces the energy levels of the Zn-3d states, and overestimates the crystal-field splitting energy. Without spin-orbit coupling, the order of the states at the top of VB is found to be normal for all the ZnX phases considered. Upon inclusion of the spin-orbit coupling in calculations, ZnO in zinc-blende- and wurtzite-type phases become anomalous. It is shown that the Zn-3d electrons are responsible for the anomalous order. The effective masses of electrons and holes have been calculated and found that holes are much anisotropic and heavier than the electrons in agreement with experimental findings. The typical errors in calculated band gaps and related parameters originate from strong Coulomb correlations, which are found to be highly significant in ZnO. The LDA+U approach is found to correct the strong correlation of the Zn-3d electrons, and thus improves the agreement with the experimentally established location of the Zn-3d levels. Consequently, it increases significantly the parameters underestimated in the pure LDA calculations.

OriģinālvalodaAngļu
Lapas (no-līdz)162-168
Lapu skaits7
ŽurnālsJournal of Crystal Growth
Sējums287
Izdevuma numurs1
DOIs
Publikācijas statussPublicēts - 18 janv. 2006
Ārēji publicēts
PasākumsProceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials -
Ilgums: 3 jūl. 20058 jūl. 2005

Nospiedums

Uzziniet vairāk par pētniecības tēmām “Electronic structure and band parameters for ZnX (X = O, S, Se, Te)”. Kopā tie veido unikālu nospiedumu.

Citēt šo