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Electronic structure of Ce3+ in yttrium and lutetium orthoaluminate crystals and single crystal layers

  • Yongjie Wang
  • , D. Włodarczyk
  • , Li Li
  • , A. Wittlin
  • , H. Przybylińska
  • , P. Sybilski
  • , Ya Zhydachevskii
  • , Chong Geng Ma
  • , M. G. Brik
  • , M. Malinowski
  • , Yu Zorenko
  • , V. Gorbenko
  • , A. Suchocki*
  • *Šī darba korespondējošais autors
  • Institute of Physics of the Polish Academy of Sciences
  • Chongqing University of Posts and Telecommunications
  • Cardinal Stefan Wyszynski University
  • University of Verona
  • University of Tartu
  • Jan Dlugosz University in Czestochowa
  • Warsaw University of Technology
  • Kazimierz Wielki University

Zinātniskās darbības rezultāts: Devums žurnālamZinātniskais raksts (žurnālā)koleģiāli recenzēts

5 Atsauces (Scopus)

Kopsavilkums

Low temperature infrared absorption spectra of yttrium orthoaluminate and lutetium orthoaluminate bulk crystals and liquid phase epitaxy grown single crystalline films doped with Ce3+ are presented. In the region of intra-configurational 4f – 4f transitions the spectra indicate the existence of at least three different Ce3+ related centers. The dominant center is associated with Ce substituting yttrium or lutetium. The two additional centers are most probably related to so called antisite positions of rare-earth ions in orthoaluminates, i.e., ions on Al sites. The concentration of antisite defects is lower in epitaxially grown layers of yttrium orthoaluminate than in the bulk crystals, in spite of the higher doping concentration. In contrast, in lutetium orthoaluminate additional Ce3+ centers are also present in epitaxial layers at quite high concentration. Crystal field analysis based on the exchange charge model exhibits excellent agreement of the calculated transition energies with experimental data for the dominant Ce3+ center. The linewidths of the 4f-4f transitions in both types of crystals are different depending on the final level of transition. This is explained as a result of electron-phonon coupling, enhanced by the matching inter-level spacing of the 2F7/2 state with phonon energies of the examined materials.

OriģinālvalodaAngļu
Lapas (no-līdz)157-163
Lapu skaits7
ŽurnālsJournal of Alloys and Compounds
Sējums723
DOIs
Publikācijas statussPublicēts - 2017
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