Epitaxial Tl-2201 thin films on single crystal LaAlO3: Preparation and properties

H. Q. Chen; L. G. Johansson; Z. G. Ivanov; D. Erts

doi:10.1002/(SICI)1521-396X(199903)172:1<165::AID-PSSA165>3.0.CO;2-R

Epitaxial Tl-2201 thin films on single crystal LaAlO₃: Preparation and properties

H. Q. Chen^*
, L. G. Johansson
, Z. G. Ivanov
, D. Erts

^*Šī darba korespondējošais autors

University of Gothenburg
Chalmers University of Technology

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

12 Atsauces (Scopus)

Kopsavilkums

Epitaxial Tl-2201 films have been prepared on single crystal LaAlO₃ substrates. Precursor films made by laser ablation were treated with Tl₂O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl₂O(g) source on the properties of the films were investigated. By optimizing the method of preparation, highly smooth, c-axis oriented and epitaxial films were obtained. The rocking curve of the (0,0,10) reflection had a FWHM of 0.27%. A maximum T_c of 92 K was achieved in as-annealed films.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	165-175
Lapu skaits	11
Žurnāls	Physica Status Solidi (A) Applied Research
Sējums	172
Izdevuma numurs	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199903)172:1<165::AID-PSSA165>3.0.CO;2-R
Publikācijas statuss	Publicēts - marts 1999
Ārēji publicēts	Jā

Piekļuve Dokumentiem

10.1002/(SICI)1521-396X(199903)172:1<165::AID-PSSA165>3.0.CO;2-R

Citi faili un saites

Saite uz publikāciju Scopus

Citēt šo

@article{1aa6354cd9b3403cae119aeb975588a9,

title = "Epitaxial Tl-2201 thin films on single crystal LaAlO3: Preparation and properties",

abstract = "Epitaxial Tl-2201 films have been prepared on single crystal LaAlO3 substrates. Precursor films made by laser ablation were treated with Tl2O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl2O(g) source on the properties of the films were investigated. By optimizing the method of preparation, highly smooth, c-axis oriented and epitaxial films were obtained. The rocking curve of the (0,0,10) reflection had a FWHM of 0.27\%. A maximum Tc of 92 K was achieved in as-annealed films.",

author = "Chen, \{H. Q.\} and Johansson, \{L. G.\} and Ivanov, \{Z. G.\} and D. Erts",

year = "1999",

month = mar,

doi = "10.1002/(SICI)1521-396X(199903)172:1<165::AID-PSSA165>3.0.CO;2-R",

language = "English",

volume = "172",

pages = "165--175",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Epitaxial Tl-2201 thin films on single crystal LaAlO3

T2 - Preparation and properties

AU - Chen, H. Q.

AU - Johansson, L. G.

AU - Ivanov, Z. G.

AU - Erts, D.

PY - 1999/3

Y1 - 1999/3

N2 - Epitaxial Tl-2201 films have been prepared on single crystal LaAlO3 substrates. Precursor films made by laser ablation were treated with Tl2O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl2O(g) source on the properties of the films were investigated. By optimizing the method of preparation, highly smooth, c-axis oriented and epitaxial films were obtained. The rocking curve of the (0,0,10) reflection had a FWHM of 0.27%. A maximum Tc of 92 K was achieved in as-annealed films.

AB - Epitaxial Tl-2201 films have been prepared on single crystal LaAlO3 substrates. Precursor films made by laser ablation were treated with Tl2O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl2O(g) source on the properties of the films were investigated. By optimizing the method of preparation, highly smooth, c-axis oriented and epitaxial films were obtained. The rocking curve of the (0,0,10) reflection had a FWHM of 0.27%. A maximum Tc of 92 K was achieved in as-annealed films.

UR - https://www.scopus.com/pages/publications/0033098248

U2 - 10.1002/(SICI)1521-396X(199903)172:1<165::AID-PSSA165>3.0.CO;2-R

DO - 10.1002/(SICI)1521-396X(199903)172:1<165::AID-PSSA165>3.0.CO;2-R

M3 - Article

AN - SCOPUS:0033098248

SN - 0031-8965

VL - 172

SP - 165

EP - 175

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -