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Excited state dynamics and photostimulated defects creation processes in the undoped and Cr3+ - doped LiGa5O8 spinel

  • M. G. Brik
  • , V. Hreb
  • , A. Kissabekova
  • , A. Krasnikov
  • , V. V. Laguta
  • , L. Vasylechko
  • , S. Zazubovich*
  • , H. Zhydachevska
  • , Ya Zhydachevskyy
  • *Šī darba korespondējošais autors
  • Chongqing University of Posts and Telecommunications
  • University of Belgrade
  • University of Tartu
  • Jan Dlugosz University in Czestochowa
  • Academy of Romanian Scientists
  • Lviv Polytechnic National University
  • Pavlodar State Pedagogical University
  • Czech Academy of Sciences
  • Institute of Physics of the Polish Academy of Sciences
  • Berdyansk State Pedagogical University

Zinātniskās darbības rezultāts: Devums žurnālamZinātniskais raksts (žurnālā)koleģiāli recenzēts

Kopsavilkums

The undoped and Cr3+-doped LiGa5O8 microcrystalline powder samples have been studied in the 6 - 650 K temperature range with the use of the X-ray diffraction, photoluminescence, cathodoluminescence, thermoluminescence, and electron paramagnetic resonance methods. The origin of the electron and hole centers responsible for the thermoluminescence and near-infrared long-lasting persistent luminescence of LiGa5O8:Cr, as well as the mechanisms of the processes taking place under selective photoexcitation in the exciton and different Cr3+-related absorption bands, have been investigated. The complex 4.35 eV excitation band of the Cr3+-related luminescence is suggested to arise from both the 4A2g4T1g(4P) electron transitions of a Cr3+ ion and the electron-transfer transitions from the ground state of a Cr3+ ion to the conduction band, producing the hole Cr4+ centers and various electron centers. Temperature dependencies of the photoluminescence intensity have been studied for the emission bands, arising from the 2Eg4A2g and 4T2g4A2g electron transitions of Cr3+ ions. The activation energy is determined for the thermal population of the upper 4T2g excited state of a Cr3+ ion from the lowest 2Eg excited state (≈75 meV).

OriģinālvalodaAngļu
Raksta numurs122007
ŽurnālsJournal of Luminescence
Sējums297
DOIs
Publikācijas statussPublicēts - sept. 2026
Ārēji publicēts

OECD Zinātnes nozare

  • 1.3 Fizika un astronomija

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