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Exploring the effect of oxygen environment on the Mo/CdTe/CdSe solar cell substrate configuration

  • Xiutao Yang
  • , Yuchen Long
  • , Yujie Zheng
  • , Jiayi Wang
  • , Biao Zhou
  • , Shenghui Xie
  • , Bing Li
  • , Jingquan Zhang
  • , Xia Hao
  • , Smagul Karazhanov
  • , Guanggen Zeng*
  • , Lianghuan Feng
  • *Šī darba korespondējošais autors
  • College of Materials Science and Engineering
  • Sichuan University
  • Institute for Energy Technology

Zinātniskās darbības rezultāts: Devums žurnālamZinātniskais raksts (žurnālā)koleģiāli recenzēts

6 Atsauces (Scopus)

Kopsavilkums

Incorporating Se element into Cadmium telluride (CdTe)-based superstrate configuration solar cells have advanced impressively. However, molybdenum (Mo)/CdTe/CdSe substrate configuration devices remain relatively unexplored, and Mo foil oxidation behavior during the fabrication process is kept in the dark. This work investigates a fresh CdTe/CdSe substrate configuration solar cell using Mo substrates. Mo/CdTe/CdSe/ZnO/AZO/ITO solar cells have been fabricated, CdTe absorber layer was obtained by closed space sublimation (CSS) under ∼2000 pa pressure in varying Ar/O2 flu ratio. The champion device had an efficiency of 3.87% with unintentional Cu-doping and back contact. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-Ray spectroscopy (EDS) were applied to study the properties of CdTe films. Before CdTe deposition, molybdenum oxide (MoOx) was generated while heating the Mo substrate in an oxygen-containing environment. This buffer layer plays a pivotal role in blocking non-Ohmic back contact analyzed by current-voltage-temperature (J-V-T) measurements. Molybdenum oxidation states were extensively studied to build the relationship with a solar cell device. Our findings indicated that different oxygen partial pressure had less relevance with the CdTe surface chemical environment but was incredibly relevant for Mo metal foil oxidation states.

OriģinālvalodaAngļu
Raksta numurs107267
ŽurnālsMaterials Science in Semiconductor Processing
Sējums156
DOIs
Publikācijas statussPublicēts - 15 marts 2023
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