@inproceedings{9fef198e2073405b84784ab23727c92c,
title = "Formation of porous Ga2O3/GaAs layers for electronic devices",
abstract = "The article presents a simple and cheap method to form a porous structure of Ga2O3/GaAs on the surface of monocrystalline gallium arsenide. It is shown that two-stage etching in the nitric acid solution leads to massive etching pits as well as small pores on the surface. Ethanol added to the electrolyte solution in the second stage enables to form a passivating Ga2O3 layer. The obtained structures were investigated using SEM, EDX and Raman spectroscopy.",
keywords = "EDX, electrochemical etching, gallium arsenide, gallium oxide, Raman spectrum",
author = "Yana Suchikova and Andriy Lazarenko and Sergii Kovachov and Abay Usseinov and Zhakyp Karipbaev and Anatolijs Popovs",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",
year = "2022",
doi = "10.1109/TCSET55632.2022.9766890",
language = "English",
isbn = "9781665468619",
series = "Proceedings - 16th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering, TCSET 2022",
publisher = "IEEE]",
pages = "410--413",
booktitle = "Proceedings - 16th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering, TCSET 2022",
}