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Ga2+ hole centers and photostimulated luminescence in the x-ray storage phosphor RbBr:Ga+

  • U. Rogulis*
  • , S. Schweizer
  • , S. Assmann
  • , J. M. Spaeth
  • *Šī darba korespondējošais autors
  • Paderborn University

Zinātniskās darbības rezultāts: Devums žurnālamZinātniskais raksts (žurnālā)koleģiāli recenzēts

18 Atsauces (Scopus)

Kopsavilkums

It was previously shown that RbBr doped with Ga+ is an efficient x-ray storage phosphor with a figure of merit comparable to that of the commercially used BaFBr:Eu2+. The paramagnetic hole centers generated upon x-irradiation involved in the storage and read-out process were investigated by measuring the magnetic circular dichroism of the optical absorption (MCDA), the MCDA-detected electron paramagnetic resonance (MCDA-EPR) and the photostimulated luminescence (PSL). Two different Ga2+ hole centers with a hyperfine interaction with Ga of A = 8.2 GHz and A = 6.0 GHz, respectively, were found. No superhyperfine interaction was resolved. Therefore, the structural difference between the two Ga2+ centers could not be established from EPR. The PSL effect is correlated only to one of the two Ga2+ centers, namely that with A = 8.2 GHz. The generation mechanism of the two hole centers is investigated. It is proposed that the PSL-active Ga2+ center is an isolated Ga2+ on a Rb+ site, whereas the other center is a Ga2+-cation vacancy complex.

OriģinālvalodaAngļu
Lapas (no-līdz)4537-4542
Lapu skaits6
ŽurnālsJournal of Applied Physics
Sējums84
Izdevuma numurs8
DOIs
Publikācijas statussPublicēts - 15 okt. 1998

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