High-quality PbZr0.52Ti0.48O3 films prepared by modified sol-gel route at low temperature

J. Perez; P. M. Vilarinho; A. L. Kholkin

doi:10.1016/j.tsf.2003.10.104

High-quality PbZr_0.52Ti_0.48O₃ films prepared by modified sol-gel route at low temperature

J. Perez
, P. M. Vilarinho
, A. L. Kholkin^*

^*Šī darba korespondējošais autors

University of Aveiro

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

32 Atsauces (Scopus)

Kopsavilkums

A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr_0.52Ti_0.48O₃ (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 °C possess a dielectric permittivity of ∼1900, a remanent polarization of ∼30 μC/cm² and a coercive field of ∼60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	20-24
Lapu skaits	5
Žurnāls	Thin Solid Films
Sējums	449
Izdevuma numurs	1-2
DOIs	https://doi.org/10.1016/j.tsf.2003.10.104
Publikācijas statuss	Publicēts - 2 febr. 2004
Ārēji publicēts	Jā

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abstract = "A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr0.52Ti0.48O3 (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20\%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 °C possess a dielectric permittivity of ∼1900, a remanent polarization of ∼30 μC/cm2 and a coercive field of ∼60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems.",

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AU - Kholkin, A. L.

PY - 2004/2/2

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N2 - A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr0.52Ti0.48O3 (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 °C possess a dielectric permittivity of ∼1900, a remanent polarization of ∼30 μC/cm2 and a coercive field of ∼60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems.

AB - A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr0.52Ti0.48O3 (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 °C possess a dielectric permittivity of ∼1900, a remanent polarization of ∼30 μC/cm2 and a coercive field of ∼60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems.

KW - Crystallization

KW - Dielectric properties

KW - Growth mechanism

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