Improvement of ß-SiC/por-Si/mono-Si Heterostructures for Supercapacitor Applications by Mitigating Lattice Mismatch and Improving Electrochemical Performance

This research introduces a novel β-SiC/porSi /mono-Si heterostructure fabrication method aimed at addressing the challenges of lattice mismatch and enhancing electrochemical performance for supercapacitor applications. Integrating a porous silicon buffer layer mitigates strain, enhances adhesion, and reduces defect densities in SiC films. Comprehensive structural and crystalline assessments are conducted using SEM, EDX, XRD, and Raman spectroscopy, revealing an orderly and pure morphology with high crystallinity. Our results indicate significant potential for supercapacitors, evidenced by an increased surface area for charge storage and a stable electrode-electrolyte interface, crucial for rapid energy delivery and high-power applications. The straightforward carbonization process also underscores this technology's scalability and industrial viability.