Interconversion between non-bridging oxygen hole center and peroxy radical in F2-laser-irradiated SiO2 glass

Koichi Kajihara; Linards Skuja; Masahiro Hirano; Hideo Hosono

doi:10.1016/j.jnoncrysol.2004.08.026

Interconversion between non-bridging oxygen hole center and peroxy radical in F₂-laser-irradiated SiO₂ glass

Koichi Kajihara^*
, Linards Skuja
, Masahiro Hirano
, Hideo Hosono

^*Šī darba korespondējošais autors

Optisko materiālu laboratorija, Cietvielu fizikas institūts

Japan Science and Technology Agency
Institute of Science Tokyo

Zinātniskās darbības rezultāts: Devums žurnālam › Konferences zinātniskais raksts › koleģiāli recenzēts

14 Atsauces (Scopus)

Kopsavilkums

Formation processes of the peroxy radical (POR) were examined in high-purity SiO₂ glass exposed to F₂-laser light which creates mobile atomic oxygen (O°) by photolyzing the interstitial oxygen molecules (O₂). It was proved that under these conditions POR is formed by a reaction of the non-bridging oxygen hole center (NBOHC, an oxygen dangling bond) with O°, not by a reaction between the E' center (a silicon dangling bond) and O₂. Subsequent exposure to KrF laser light photolyzes POR and recoveres NBOHC by dissociating the O-O bond in POR. These findings corroborate the important role of O° in defect processes in SiO₂ glass.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	219-223
Lapu skaits	5
Žurnāls	Journal of Non-Crystalline Solids
Sējums	345-346
DOIs	https://doi.org/10.1016/j.jnoncrysol.2004.08.026
Publikācijas statuss	Publicēts - 15 okt. 2004
Pasākums	Physics of Non-Crystalline Solids 10 - Parma, Itālija Ilgums: 15 okt. 2004 → 15 okt. 2004

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10.1016/j.jnoncrysol.2004.08.026

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title = "Interconversion between non-bridging oxygen hole center and peroxy radical in F2-laser-irradiated SiO2 glass",

abstract = "Formation processes of the peroxy radical (POR) were examined in high-purity SiO2 glass exposed to F2-laser light which creates mobile atomic oxygen (O°) by photolyzing the interstitial oxygen molecules (O2). It was proved that under these conditions POR is formed by a reaction of the non-bridging oxygen hole center (NBOHC, an oxygen dangling bond) with O°, not by a reaction between the E' center (a silicon dangling bond) and O2. Subsequent exposure to KrF laser light photolyzes POR and recoveres NBOHC by dissociating the O-O bond in POR. These findings corroborate the important role of O° in defect processes in SiO2 glass.",

author = "Koichi Kajihara and Linards Skuja and Masahiro Hirano and Hideo Hosono",

year = "2004",

month = oct,

day = "15",

doi = "10.1016/j.jnoncrysol.2004.08.026",

language = "English",

volume = "345-346",

pages = "219--223",

journal = "Journal of Non-Crystalline Solids",

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note = "Physics of Non-Crystalline Solids 10 ; Conference date: 15-10-2004 Through 15-10-2004",

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TY - JOUR

T1 - Interconversion between non-bridging oxygen hole center and peroxy radical in F2-laser-irradiated SiO2 glass

AU - Kajihara, Koichi

AU - Skuja, Linards

AU - Hirano, Masahiro

AU - Hosono, Hideo

PY - 2004/10/15

Y1 - 2004/10/15

N2 - Formation processes of the peroxy radical (POR) were examined in high-purity SiO2 glass exposed to F2-laser light which creates mobile atomic oxygen (O°) by photolyzing the interstitial oxygen molecules (O2). It was proved that under these conditions POR is formed by a reaction of the non-bridging oxygen hole center (NBOHC, an oxygen dangling bond) with O°, not by a reaction between the E' center (a silicon dangling bond) and O2. Subsequent exposure to KrF laser light photolyzes POR and recoveres NBOHC by dissociating the O-O bond in POR. These findings corroborate the important role of O° in defect processes in SiO2 glass.

AB - Formation processes of the peroxy radical (POR) were examined in high-purity SiO2 glass exposed to F2-laser light which creates mobile atomic oxygen (O°) by photolyzing the interstitial oxygen molecules (O2). It was proved that under these conditions POR is formed by a reaction of the non-bridging oxygen hole center (NBOHC, an oxygen dangling bond) with O°, not by a reaction between the E' center (a silicon dangling bond) and O2. Subsequent exposure to KrF laser light photolyzes POR and recoveres NBOHC by dissociating the O-O bond in POR. These findings corroborate the important role of O° in defect processes in SiO2 glass.

UR - https://www.scopus.com/pages/publications/9544252199

U2 - 10.1016/j.jnoncrysol.2004.08.026

DO - 10.1016/j.jnoncrysol.2004.08.026

M3 - Conference article

AN - SCOPUS:9544252199

SN - 0022-3093

VL - 345-346

SP - 219

EP - 223

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - Physics of Non-Crystalline Solids 10

Y2 - 15 October 2004 through 15 October 2004

ER -