Light intensity and its polarization relation to the photo-induced mass movement in thin layers of chalcogenide vitreous semiconductors

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

Oriģinālvaloda	Angļu
Lapas (no-līdz)	1462-1466
Žurnāls	Journal of Optoelectronics and Advanced Materials
Sējums	13
Izdevuma numurs	11/12
Publikācijas statuss	Publicēts - 2011

OECD Zinātnes nozare

@article{63b9ab5a33244ad3a57b44cac9f232ac,

title = "Light intensity and its polarization relation to the photo-induced mass movement in thin layers of chalcogenide vitreous semiconductors",

author = "Jānis Teteris and Uģis Gertners",

year = "2011",

language = "English",

volume = "13",

pages = "1462--1466",

journal = "Journal of Optoelectronics and Advanced Materials",

issn = "1454-4164",

publisher = "National Institute of Optoelectronics",

number = "11/12",

}

Light intensity and its polarization relation to the photo-induced mass movement in thin layers of chalcogenide vitreous semiconductors. / Teteris, Jānis; Gertners, Uģis.
(gadā): Journal of Optoelectronics and Advanced Materials, Sēj. 13, Nr. 11/12, 2011, lpp. 1462-1466.

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

TY - JOUR

T1 - Light intensity and its polarization relation to the photo-induced mass movement in thin layers of chalcogenide vitreous semiconductors

AU - Teteris, Jānis

AU - Gertners, Uģis

PY - 2011

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M3 - Article

SN - 1454-4164

VL - 13

SP - 1462

EP - 1466

JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

IS - 11/12

ER -