Low temperature photostimulated luminescence of KBr-In crystal after uv irradiation

L. E. Trinkler; M. F. Trinkler

doi:10.1080/10420159508218829

Low temperature photostimulated luminescence of KBr-In crystal after uv irradiation

L. E. Trinkler
, M. F. Trinkler

Spektroskopijas laboratorija, Cietvielu fizikas institūts

University of Latvia

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

Kopsavilkums

It has been found that the photostimulated luminescence (PSL) of KBr-In crystal after UV irradiation at 80 K is characterized with a complex stimulation spectrum, including 2.0, 1.8, 1.6 and 0.6 eV bands. It is proposed that the PSL is due to the optically stimulated recombination of the close defect pairs created after the decay of both lattice and near-impurity excitons. The same recombination centers are produced during the photoionization in the C absorption band.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	249-252
Lapu skaits	4
Žurnāls	Radiation Effects and Defects in Solids
Sējums	136
Izdevuma numurs	1-4
DOIs	https://doi.org/10.1080/10420159508218829
Publikācijas statuss	Publicēts - 1995

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title = "Low temperature photostimulated luminescence of KBr-In crystal after uv irradiation",

abstract = "It has been found that the photostimulated luminescence (PSL) of KBr-In crystal after UV irradiation at 80 K is characterized with a complex stimulation spectrum, including 2.0, 1.8, 1.6 and 0.6 eV bands. It is proposed that the PSL is due to the optically stimulated recombination of the close defect pairs created after the decay of both lattice and near-impurity excitons. The same recombination centers are produced during the photoionization in the C absorption band.",

keywords = "alkali halide crystals, exciton, photostimulated luminescence, radiation defects",

author = "Trinkler, \{L. E.\} and Trinkler, \{M. F.\}",

year = "1995",

doi = "10.1080/10420159508218829",

language = "English",

volume = "136",

pages = "249--252",

journal = "Radiation Effects and Defects in Solids",

issn = "1042-0150",

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T1 - Low temperature photostimulated luminescence of KBr-In crystal after uv irradiation

AU - Trinkler, L. E.

AU - Trinkler, M. F.

PY - 1995

Y1 - 1995

N2 - It has been found that the photostimulated luminescence (PSL) of KBr-In crystal after UV irradiation at 80 K is characterized with a complex stimulation spectrum, including 2.0, 1.8, 1.6 and 0.6 eV bands. It is proposed that the PSL is due to the optically stimulated recombination of the close defect pairs created after the decay of both lattice and near-impurity excitons. The same recombination centers are produced during the photoionization in the C absorption band.

AB - It has been found that the photostimulated luminescence (PSL) of KBr-In crystal after UV irradiation at 80 K is characterized with a complex stimulation spectrum, including 2.0, 1.8, 1.6 and 0.6 eV bands. It is proposed that the PSL is due to the optically stimulated recombination of the close defect pairs created after the decay of both lattice and near-impurity excitons. The same recombination centers are produced during the photoionization in the C absorption band.

KW - alkali halide crystals

KW - exciton

KW - photostimulated luminescence

KW - radiation defects

UR - https://www.scopus.com/pages/publications/0029518151

U2 - 10.1080/10420159508218829

DO - 10.1080/10420159508218829

M3 - Article

AN - SCOPUS:0029518151

SN - 1042-0150

VL - 136

SP - 249

EP - 252

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

IS - 1-4

ER -

Low temperature photostimulated luminescence of KBr-In crystal after uv irradiation

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