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Mg yNi 1-y(H x) thin films deposited by magnetron co-sputtering

  • T. Mongstad*
  • , C. C. You
  • , A. Thogersen
  • , J. P. Maehlen
  • , Ch Platzer-Björkman
  • , B. C. Hauback
  • , S. Zh Karazhanov
  • *Šī darba korespondējošais autors
  • Institute for Energy Technology
  • Uppsala University

Zinātniskās darbības rezultāts: Devums žurnālamZinātniskais raksts (žurnālā)koleģiāli recenzēts

13 Atsauces (Scopus)

Kopsavilkums

In this work we have synthesized thin films of Mg yNi 1-y(H x) metal and metal hydride with y between 0 and 1. The films are deposited by magnetron co-sputtering of metallic targets of Mg and Ni. Metallic Mg yNi 1-y films were deposited with pure Ar plasma while Mg yNi 1-yH x hydride films were deposited reactively with 30% H 2 in the Ar plasma. The depositions were done with a fixed substrate carrier, producing films with a spatial gradient in the Mg and Ni composition. The combinatorial method of co-sputtering gives an insight into the phase diagram of Mg yNi 1-y and Mg yNi 1-yH x, and allows us to investigate structural, optical and electrical properties of the resulting alloys. Our results show that reactive sputtering gives direct deposition of metal hydride films, with high purity in the case of Mg ∼2NiH ∼4. We have observed limited oxidation after several months of exposure to ambient conditions. Mg yNi 1-y and Mg yNi 1-yH x films might be applied for optical control in smart windows, optical sensors and as a semiconducting material for photovoltaic solar cells.

OriģinālvalodaAngļu
Lapas (no-līdz)76-83
Lapu skaits8
ŽurnālsJournal of Alloys and Compounds
Sējums527
DOIs
Publikācijas statussPublicēts - 25 jūn. 2012
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