MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth

Yuri Gelfgat

MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth

Yuri Gelfgat^*

^*Šī darba korespondējošais autors

Eksakto zinātņu un tehnoloģiju fakultāte

Zinātniskās darbības rezultāts: Devums konferencē › Konferences raksts › koleģiāli recenzēts

Kopsavilkums

This paper presents some results of the investigation of the steady magnetic field influence on hydrodynamics and heat/mass transfer in processes of semiconductor single crystal growth (Si, Ge, InSn). The investigation employed mathematical and physical simulation techniques of relevant processes and full-scale experiments on growth facilities. A number of additional MHD phenomena have been found generated in the melt due to the rearrangement of flow pattern, the formation of specific convective cells, and the origin of MHD boundary and shift layer.

Oriģinālvaloda	Angļu
Lapas	29-40
Lapu skaits	12
Publikācijas statuss	Publicēts - 1998
Pasākums	Proceedings of the 1998 TMS Annual Meeting - San Antonio, TX, USA Ilgums: 15 febr. 1998 → 19 febr. 1998

Konference

Konference	Proceedings of the 1998 TMS Annual Meeting
Pilsēta	San Antonio, TX, USA
Periods	15/02/98 → 19/02/98

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@conference{b15b4bbf31a643ec84e195e632f9a2ae,

title = "MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth",

abstract = "This paper presents some results of the investigation of the steady magnetic field influence on hydrodynamics and heat/mass transfer in processes of semiconductor single crystal growth (Si, Ge, InSn). The investigation employed mathematical and physical simulation techniques of relevant processes and full-scale experiments on growth facilities. A number of additional MHD phenomena have been found generated in the melt due to the rearrangement of flow pattern, the formation of specific convective cells, and the origin of MHD boundary and shift layer.",

author = "Yuri Gelfgat",

year = "1998",

language = "English",

pages = "29--40",

note = "Proceedings of the 1998 TMS Annual Meeting ; Conference date: 15-02-1998 Through 19-02-1998",

}

TY - CONF

T1 - MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth

AU - Gelfgat, Yuri

PY - 1998

Y1 - 1998

N2 - This paper presents some results of the investigation of the steady magnetic field influence on hydrodynamics and heat/mass transfer in processes of semiconductor single crystal growth (Si, Ge, InSn). The investigation employed mathematical and physical simulation techniques of relevant processes and full-scale experiments on growth facilities. A number of additional MHD phenomena have been found generated in the melt due to the rearrangement of flow pattern, the formation of specific convective cells, and the origin of MHD boundary and shift layer.

AB - This paper presents some results of the investigation of the steady magnetic field influence on hydrodynamics and heat/mass transfer in processes of semiconductor single crystal growth (Si, Ge, InSn). The investigation employed mathematical and physical simulation techniques of relevant processes and full-scale experiments on growth facilities. A number of additional MHD phenomena have been found generated in the melt due to the rearrangement of flow pattern, the formation of specific convective cells, and the origin of MHD boundary and shift layer.

UR - https://www.scopus.com/pages/publications/0031679567

M3 - Paper

AN - SCOPUS:0031679567

SP - 29

EP - 40

T2 - Proceedings of the 1998 TMS Annual Meeting

Y2 - 15 February 1998 through 19 February 1998

ER -

MHD methods for controlling hydrodynamics and heat/mass transfer in processes of bulk semiconductor single crystal growth

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