Modelling of the influence of electromagnetic force on melt convection and dopant distribution during floating zone growth of Silicon

Jānis Virbulis; Andrejs Sabanskis; Kirils Surovovs; Armands Krauze; Matīss Plāte

Modelling of the influence of electromagnetic force on melt convection and dopant distribution during floating zone growth of Silicon

Zinātniskās darbības rezultāts: Nodaļa grāmatā/enciklopēdijā/konferences krājumā › Konferences zinātniskais raksts › Pētniecība

Oriģinālvaloda	Angļu
Rīkotāja publikācijas nosaukums	9th International Conference on Fundamental and applied MHD, thermo acoustic and and space technologies : Theme 9 : Space : Riga - Latvia, June 16-20, 2014.
Publikācijas vieta	[B.v.
Izdevējs	b.i.]
Lapas	186-190
Sējums	2
Publikācijas statuss	Publicēts - 2014

OECD Zinātnes nozare

1.3 Fizika un astronomija

Citi faili un saites

http://pamir.sal.lv/2014_/index.php?nav=proceedings

Citēt šo

Virbulis, J., Sabanskis, A., Surovovs, K., Krauze, A., & Plāte, M. (2014). Modelling of the influence of electromagnetic force on melt convection and dopant distribution during floating zone growth of Silicon. (gadā) 9th International Conference on Fundamental and applied MHD, thermo acoustic and and space technologies : Theme 9 : Space : Riga - Latvia, June 16-20, 2014. (Sēj. 2, lpp. 186-190). b.i.].

Virbulis, Jānis ; Sabanskis, Andrejs ; Surovovs, Kirils u.c. / Modelling of the influence of electromagnetic force on melt convection and dopant distribution during floating zone growth of Silicon. 9th International Conference on Fundamental and applied MHD, thermo acoustic and and space technologies : Theme 9 : Space : Riga - Latvia, June 16-20, 2014.. Sēj. 2 [B.v. : b.i.], 2014. lpp. 186-190

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title = "Modelling of the influence of electromagnetic force on melt convection and dopant distribution during floating zone growth of Silicon",

author = "Jānis Virbulis and Andrejs Sabanskis and Kirils Surovovs and Armands Krauze and Matīss Plāte",

year = "2014",

language = "English",

volume = "2",

pages = "186--190",

booktitle = "9th International Conference on Fundamental and applied MHD, thermo acoustic and and space technologies : Theme 9 : Space : Riga - Latvia, June 16-20, 2014.",

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Virbulis, J , Sabanskis, A , Surovovs, K , Krauze, A & Plāte, M 2014, Modelling of the influence of electromagnetic force on melt convection and dopant distribution during floating zone growth of Silicon. (kur) 9th International Conference on Fundamental and applied MHD, thermo acoustic and and space technologies : Theme 9 : Space : Riga - Latvia, June 16-20, 2014.. sēj. 2, b.i.], [B.v., lpp. 186-190.

Modelling of the influence of electromagnetic force on melt convection and dopant distribution during floating zone growth of Silicon. / Virbulis, Jānis ; Sabanskis, Andrejs ; Surovovs, Kirils u.c.
9th International Conference on Fundamental and applied MHD, thermo acoustic and and space technologies : Theme 9 : Space : Riga - Latvia, June 16-20, 2014.. Sēj. 2 [B.v.: b.i.], 2014. lpp. 186-190.

Zinātniskās darbības rezultāts: Nodaļa grāmatā/enciklopēdijā/konferences krājumā › Konferences zinātniskais raksts › Pētniecība

TY - GEN

T1 - Modelling of the influence of electromagnetic force on melt convection and dopant distribution during floating zone growth of Silicon

AU - Virbulis, Jānis

AU - Sabanskis, Andrejs

AU - Surovovs, Kirils

AU - Krauze, Armands

AU - Plāte, Matīss

PY - 2014

Y1 - 2014

UR - http://pamir.sal.lv/2014_/index.php?nav=proceedings

M3 - Conference paper

VL - 2

SP - 186

EP - 190

BT - 9th International Conference on Fundamental and applied MHD, thermo acoustic and and space technologies : Theme 9 : Space : Riga - Latvia, June 16-20, 2014.

PB - b.i.]

CY - [B.v.

ER -

Virbulis J , Sabanskis A , Surovovs K , Krauze A, Plāte M. Modelling of the influence of electromagnetic force on melt convection and dopant distribution during floating zone growth of Silicon. (gadā) 9th International Conference on Fundamental and applied MHD, thermo acoustic and and space technologies : Theme 9 : Space : Riga - Latvia, June 16-20, 2014.. Sēj. 2. [B.v.: b.i.]. 2014. lpp. 186-190