Nanoscale polarization relaxation and piezoelectric properties of SBN thin films

M. Melo; E. B. Araujo; M. Ivanov; V. Y. Shur; A. L. Kholkin

doi:10.1109/ISAF.2016.7578084

Nanoscale polarization relaxation and piezoelectric properties of SBN thin films

M. Melo^*
, E. B. Araujo
, M. Ivanov
, V. Y. Shur
, A. L. Kholkin

^*Šī darba korespondējošais autors

Universidade Estadual Paulista Júlio de Mesquita Filho
University of Aveiro
Ural Federal University

Zinātniskās darbības rezultāts: Nodaļa grāmatā/enciklopēdijā/konferences krājumā › Konferences zinātniskais raksts › Pētniecība › koleģiāli recenzēts

2 Atsauces (Scopus)

Kopsavilkums

Randomly oriented Sr_0.75Ba_0.25Nb₂O₆ thin films have been deposited on Pt(111)/Ti/SiO₂/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above T_m ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.

Oriģinālvaloda	Angļu
Rīkotāja publikācijas nosaukums	2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016
Izdevējs	Institute of Electrical and Electronics Engineers Inc.
ISBN (Elektroniski)	9781509018710
DOIs	https://doi.org/10.1109/ISAF.2016.7578084
Publikācijas statuss	Publicēts - 27 sept. 2016
Ārēji publicēts	Jā
Pasākums	2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016 - Darmstadt, Vācija Ilgums: 21 aug. 2016 → 25 aug. 2016

Publikāciju sērijas

Nosaukums	2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016

Konference

Konference	2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016
Valsts/Teritorija	Vācija
Pilsēta	Darmstadt
Periods	21/08/16 → 25/08/16

Piekļuve Dokumentiem

10.1109/ISAF.2016.7578084

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Melo, M., Araujo, E. B., Ivanov, M., Shur, V. Y., & Kholkin, A. L. (2016). Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. (gadā) 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016 Zinātniskais raksts 7578084 (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF.2016.7578084

Melo, M. ; Araujo, E. B. ; Ivanov, M. u.c. / Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016).

@inproceedings{060cab4c3cff42e78fc2b7ca1546c810,

title = "Nanoscale polarization relaxation and piezoelectric properties of SBN thin films",

abstract = "Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.",

keywords = "SBN films, piezoresponse, polarization relaxation",

author = "M. Melo and Araujo, \{E. B.\} and M. Ivanov and Shur, \{V. Y.\} and Kholkin, \{A. L.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016 ; Conference date: 21-08-2016 Through 25-08-2016",

year = "2016",

month = sep,

day = "27",

doi = "10.1109/ISAF.2016.7578084",

language = "English",

series = "2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016",

address = "United States",

}

Melo, M, Araujo, EB, Ivanov, M, Shur, VY & Kholkin, AL 2016, Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. (kur) 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016., 7578084, 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016, Darmstadt, Vācija, 21/08/16. https://doi.org/10.1109/ISAF.2016.7578084

Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. / Melo, M.; Araujo, E. B.; Ivanov, M. u.c.
2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7578084 (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016).

Zinātniskās darbības rezultāts: Nodaļa grāmatā/enciklopēdijā/konferences krājumā › Konferences zinātniskais raksts › Pētniecība › koleģiāli recenzēts

TY - GEN

T1 - Nanoscale polarization relaxation and piezoelectric properties of SBN thin films

AU - Melo, M.

AU - Araujo, E. B.

AU - Ivanov, M.

AU - Shur, V. Y.

AU - Kholkin, A. L.

PY - 2016/9/27

Y1 - 2016/9/27

N2 - Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.

AB - Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.

KW - SBN films

KW - piezoresponse

KW - polarization relaxation

UR - https://www.scopus.com/pages/publications/84994180663

U2 - 10.1109/ISAF.2016.7578084

DO - 10.1109/ISAF.2016.7578084

M3 - Conference paper

AN - SCOPUS:84994180663

T3 - 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016

BT - 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016

Y2 - 21 August 2016 through 25 August 2016

ER -

Melo M, Araujo EB, Ivanov M, Shur VY, Kholkin AL. Nanoscale polarization relaxation and piezoelectric properties of SBN thin films. (gadā) 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7578084. (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016). doi: 10.1109/ISAF.2016.7578084

Nanoscale polarization relaxation and piezoelectric properties of SBN thin films

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