Kopsavilkums
Preferentially (100) oriented PbZr0.53Ti0.47O3 (PZT) sol-gel films spin cited on Si/TiO2/Pt substrates are studied. Si/TiO2/Pt/PZT/Au heterostructures exposed to high fluence neutron irradiation (2 × 1018 n/cm2, average energy >0.1 MeV; accompanied by gamma rays dose 7.1 × 109 rad, energy ∼ 1 MeV; Tirrad.<60°C) are examined. Recovering of properties is observed at post-irradiation isochronal annealing to elevated temperatures. Dielectric permittivity as well as tg6 decrease after neutron irradiation. The most pronounced radiation-induced polarization change exhibited by the shape of hysteresis loops is caused by an internal bias field.
| Oriģinālvaloda | Angļu |
|---|---|
| Lapas (no-līdz) | 285-290 |
| Lapu skaits | 6 |
| Žurnāls | Ferroelectrics |
| Sējums | 258 |
| Izdevuma numurs | 1 |
| DOIs | |
| Publikācijas statuss | Publicēts - 2001 |
Nospiedums
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