New exciton mechanism decreasing recombination losses

Recombination of nonequilibrium carriers through single-discharge deep recombination centers with participation of excitons is investigated. Expressions are obtained describing the degree of filling of deep impurities, the recombination rate, and the lifetime of nonequilibrium carriers. It is shown that under the conditions of inelastic interaction of a deep impurity an an exciton, which leads to a nonradiating annihilation of the latter and liberation of the charge carriers captured by the impurity, the filling of the center is modulated and the recombination rate decreases with the growth of the intensity of photogeneration of excitons, whereas the lifetime of the nonequilibrium carriers increases.