Oxygen vacancy defects in antiferroelectric PbZrO3 thin film heterostructures after neutron irradiation

R. Bittner; K. Humer; H. W. Weber; K. Kundzins; A. Sternberg; D. A. Lesnyh; D. V. Kulikov; Y. V. Trushin

doi:10.1063/1.1777399

Oxygen vacancy defects in antiferroelectric PbZrO₃ thin film heterostructures after neutron irradiation

R. Bittner^*
, K. Humer
, H. W. Weber
, K. Kundzins
, A. Sternberg
, D. A. Lesnyh
, D. V. Kulikov
, Y. V. Trushin

^*Šī darba korespondējošais autors

Plāno kārtiņu laboratorija, Cietvielu fizikas institūts

TU Wien
University of Latvia
Ioffe Physico-Technical Institute

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

25 Atsauces (Scopus)

Kopsavilkums

An investigation of neutron irradiation effects on highly oriented antiferroelectric PbZrO₃ (PZ) thin films were discussed. The films were prepared by a sol-gel technique by pulsed laser deposition (PLD). The dielectric properties were investigated in a frequency range from 1 to 250 kHz and at a room temperature upto 400°C.It was observed that the films were most sensitive to neutron irradiation in the phase transition temperature T _c.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	3239-3246
Lapu skaits	8
Žurnāls	Journal of Applied Physics
Sējums	96
Izdevuma numurs	6
DOIs	https://doi.org/10.1063/1.1777399
Publikācijas statuss	Publicēts - 15 sept. 2004

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10.1063/1.1777399

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abstract = "An investigation of neutron irradiation effects on highly oriented antiferroelectric PbZrO3 (PZ) thin films were discussed. The films were prepared by a sol-gel technique by pulsed laser deposition (PLD). The dielectric properties were investigated in a frequency range from 1 to 250 kHz and at a room temperature upto 400°C.It was observed that the films were most sensitive to neutron irradiation in the phase transition temperature T c.",

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AU - Sternberg, A.

AU - Lesnyh, D. A.

AU - Kulikov, D. V.

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