Patterned laser crystallization of a-Si

B. Polyakov; G. Marcins; M. Chubarov; A. Kuzmin; V. Klykov; I. Tale

doi:10.2478/v10047-009-0009-y

Patterned laser crystallization of a-Si

B. Polyakov^*
, G. Marcins
, M. Chubarov
, A. Kuzmin
, V. Klykov
, I. Tale

^*Šī darba korespondējošais autors

University of Latvia
Sidrabe Inc.

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

2 Atsauces (Scopus)

Kopsavilkums

Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	50-54
Lapu skaits	5
Žurnāls	Latvian Journal of Physics and Technical Sciences
Sējums	46
Izdevuma numurs	3
DOIs	https://doi.org/10.2478/v10047-009-0009-y
Publikācijas statuss	Publicēts - 1 janv. 2009

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@article{6f58cc46328e4d4cbdad18830ab4b301,

title = "Patterned laser crystallization of a-Si",

abstract = "Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.",

author = "B. Polyakov and G. Marcins and M. Chubarov and A. Kuzmin and V. Klykov and I. Tale",

year = "2009",

month = jan,

day = "1",

doi = "10.2478/v10047-009-0009-y",

language = "English",

volume = "46",

pages = "50--54",

journal = "Latvian Journal of Physics and Technical Sciences",

issn = "0868-8257",

publisher = "Institute of Physical Energetics (Latvia)",

number = "3",

}

TY - JOUR

T1 - Patterned laser crystallization of a-Si

AU - Polyakov, B.

AU - Marcins, G.

AU - Chubarov, M.

AU - Kuzmin, A.

AU - Klykov, V.

AU - Tale, I.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.

AB - Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.

UR - https://www.scopus.com/pages/publications/68149101461

U2 - 10.2478/v10047-009-0009-y

DO - 10.2478/v10047-009-0009-y

M3 - Article

AN - SCOPUS:68149101461

SN - 0868-8257

VL - 46

SP - 50

EP - 54

JO - Latvian Journal of Physics and Technical Sciences

JF - Latvian Journal of Physics and Technical Sciences

IS - 3

ER -

Patterned laser crystallization of a-Si

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