Kopsavilkums
The photoconductivity spectra of ZnSe nanocrystals deposited on porous silicon wafers and wafers with silicon nanorods are studied. After deposition of ZnSe nanocrystals, a series of lines appears in the visible region of the the photoconductivity spectra of por-Si. The high-energy photoconductivity line is due to band-gap transitions in ZnSe nanoparti-cles. The other five lines of photoconductivity are due to transitions involving associative donor-acceptor centers, which include both intrinsic defects and uncontrolled impurity defects.
| Oriģinālvaloda | Angļu |
|---|---|
| Lapas (no-līdz) | 450-453 |
| Lapu skaits | 4 |
| Žurnāls | Functional Materials |
| Sējums | 27 |
| Izdevuma numurs | 3 |
| DOIs | |
| Publikācijas statuss | Publicēts - 2020 |
| Ārēji publicēts | Jā |
Nospiedums
Uzziniet vairāk par pētniecības tēmām “Photoconductivity of zinc selenide nanocrystals obtained by chemical method”. Kopā tie veido unikālu nospiedumu.Citēt šo
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