Kopsavilkums
In neutron-irradiated MgO crystals, experiments and theory demonstrate that photon excitation of the positively charged anion vacancies (F+ centers) at 5.0 eV releases holes that are subsequently trapped at V-type centers, which are cation vacancies charge-compensated by impurities, such as Al3+, F-, and OH- ions. A photoconversion mechanism occurs very likely via electron transfer to F+ centers from the quasi-local states which are induced in the valence band. INDO quantum chemical simulations of F+ centers confirmed the appearance of two induced quasi-local states located at 1.2 and 2.0 eV below the top of the valence band.
| Oriģinālvaloda | Angļu |
|---|---|
| Lapas (no-līdz) | 220-224 |
| Lapu skaits | 5 |
| Žurnāls | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Sējums | 166 |
| DOIs | |
| Publikācijas statuss | Publicēts - 2 maijs 2000 |
| Pasākums | 10th International Conference on Radiation Effects in Insulators - Jena, Ger Ilgums: 18 jūl. 1999 → 23 jūl. 1999 |
Nospiedums
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