Photosensitivity of SiO2-Al and SiO2-Na glasses under ArF (193 nm) laser

A. N. Trukhin; J. Teteris; A. Fedotov; D. L. Griscom; G. Buscarino

doi:10.1016/j.jnoncrysol.2008.11.037

Photosensitivity of SiO₂-Al and SiO₂-Na glasses under ArF (193 nm) laser

A. N. Trukhin^*
, J. Teteris
, A. Fedotov
, D. L. Griscom
, G. Buscarino

^*Šī darba korespondējošais autors

Pētījuma izpildes rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

29 Atsauces (Scopus)

Kopsavilkums

Photosensitivity of SiO₂-Al and SiO₂-Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO₂-Al and transient, life time about one hour, visible darkening in the case of SiO₂-Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case of SiO₂-Na and/or by recapture of self-trapped holes, which become mobile at high temperature in the case of SiO₂-Al. Electrons remain trapped on the localized states formed by oxygen deficient defects.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	1066-1074
Lapu skaits	9
Žurnāls	Journal of Non-Crystalline Solids
Sējums	355
Izdevuma numurs	18-21
DOIs	https://doi.org/10.1016/j.jnoncrysol.2008.11.037
Publikācijas statuss	Publicēts - 1 jūl. 2009

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10.1016/j.jnoncrysol.2008.11.037

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title = "Photosensitivity of SiO2-Al and SiO2-Na glasses under ArF (193 nm) laser",

abstract = "Photosensitivity of SiO2-Al and SiO2-Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO2-Al and transient, life time about one hour, visible darkening in the case of SiO2-Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case of SiO2-Na and/or by recapture of self-trapped holes, which become mobile at high temperature in the case of SiO2-Al. Electrons remain trapped on the localized states formed by oxygen deficient defects.",

keywords = "Absorption, Alkali silicates, Aluminosilicates, Defects, Electron spin resonance, Glasses, Laser-matter interactions, Lasers, Luminescence, Optical properties, Optical spectroscopy, Oxidation reduction, Oxide glasses, Photochromics, Photoinduced effects, Quartz, Radiation, Radiation effects, Silica, Silicates, Time resolved measurements",

author = "Trukhin, \{A. N.\} and J. Teteris and A. Fedotov and Griscom, \{D. L.\} and G. Buscarino",

year = "2009",

month = jul,

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doi = "10.1016/j.jnoncrysol.2008.11.037",

language = "English",

volume = "355",

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journal = "Journal of Non-Crystalline Solids",

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TY - JOUR

T1 - Photosensitivity of SiO2-Al and SiO2-Na glasses under ArF (193 nm) laser

AU - Trukhin, A. N.

AU - Teteris, J.

AU - Fedotov, A.

AU - Griscom, D. L.

AU - Buscarino, G.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - Photosensitivity of SiO2-Al and SiO2-Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO2-Al and transient, life time about one hour, visible darkening in the case of SiO2-Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case of SiO2-Na and/or by recapture of self-trapped holes, which become mobile at high temperature in the case of SiO2-Al. Electrons remain trapped on the localized states formed by oxygen deficient defects.

AB - Photosensitivity of SiO2-Al and SiO2-Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO2-Al and transient, life time about one hour, visible darkening in the case of SiO2-Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case of SiO2-Na and/or by recapture of self-trapped holes, which become mobile at high temperature in the case of SiO2-Al. Electrons remain trapped on the localized states formed by oxygen deficient defects.

KW - Absorption

KW - Alkali silicates

KW - Aluminosilicates

KW - Defects

KW - Electron spin resonance

KW - Glasses

KW - Laser-matter interactions

KW - Lasers

KW - Luminescence

KW - Optical properties

KW - Optical spectroscopy

KW - Oxidation reduction

KW - Oxide glasses

KW - Photochromics

KW - Photoinduced effects

KW - Quartz

KW - Radiation

KW - Radiation effects

KW - Silica

KW - Silicates

KW - Time resolved measurements

UR - https://www.scopus.com/pages/publications/66349131244

U2 - 10.1016/j.jnoncrysol.2008.11.037

DO - 10.1016/j.jnoncrysol.2008.11.037

M3 - Article

AN - SCOPUS:66349131244

SN - 0022-3093

VL - 355

SP - 1066

EP - 1074

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 18-21

ER -