Kopsavilkums
CsBr doped with Ga+ has previously proved to be an efficient X-ray storage phosphor with a figure of merit comparable to that of the commercially used BaFBr:Eu2+. By measuring the magnetic circular dichroism of the optical absorption (MCDA), the MCDA-detected electron paramagnetic resonance and the photostimulated luminescence (PSL), the paramagnetic defect centers generated upon x-irradiation involved in the storage and read-out process were investigated and found to be particularly simple: The electron traps are F centers, the hole trap centers are Ga2 + centers with a hyperfine interaction with 69Ga of 69A = 6.5 GHz. No superhyperfine interaction was resolved. It is proposed that the PSL-active Ga2+ center is an isolated Ga2+ on a Cs+ site.
| Oriģinālvaloda | Angļu |
|---|---|
| Lapas (no-līdz) | 207-211 |
| Lapu skaits | 5 |
| Žurnāls | Journal of Applied Physics |
| Sējums | 87 |
| Izdevuma numurs | 1 |
| DOIs | |
| Publikācijas statuss | Publicēts - 1 janv. 2000 |
Nospiedums
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