Pressure-dependent large area synthesis and electronic structure of MoS2

Dhananjay K. Sharma; E. Venkata Ramana; Sara Fateixa; María J. Hortigüela; Gonzalo Otero-Irurueta; Helena I.S. Nogueira; Andrei Kholkin

doi:10.1016/j.materresbull.2017.09.007

Pressure-dependent large area synthesis and electronic structure of MoS₂

Dhananjay K. Sharma^*
, E. Venkata Ramana
, Sara Fateixa
, María J. Hortigüela
, Gonzalo Otero-Irurueta
, Helena I.S. Nogueira
, Andrei Kholkin

^*Šī darba korespondējošais autors

University of Aveiro
Ural Federal University

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

6 Atsauces (Scopus)

Kopsavilkums

Molybdenum disulfide (MoS₂) is a transition metal dichalcogenide, which along with graphene, has a great potential to become a material of choice for the next generation of nanoelectronics. We report the synthesis of a large-area MoS₂ obtained by sulfurization of MoO₃ using chemical vapor deposition (CVD) at different Ar base pressures. The optimal pressure for the growth was found to be ∼50 mbar (millibar). The evolution of MoS₂ phase as a function of Ar gas pressure was monitored by confocal Raman spectroscopy. As synthesized MoS₂ shows direct bandgap of 1.6 eV evaluated by UV–vis spectroscopy. We report for the first time the valence band spectra and the work function of MoS₂ on SiO₂/Si calculated by ultraviolet photoemission spectroscopy, which was found to be 4.67 eV. In-situ electrical measurements demonstrated expected semiconducting behavior of the grown triangular crystals. These studies show MoS₂ crystallites growth by controlling the parameters in CVD process.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	265-271
Lapu skaits	7
Žurnāls	Materials Research Bulletin
Sējums	97
DOIs	https://doi.org/10.1016/j.materresbull.2017.09.007
Publikācijas statuss	Publicēts - janv. 2018
Ārēji publicēts	Jā

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title = "Pressure-dependent large area synthesis and electronic structure of MoS2",

abstract = "Molybdenum disulfide (MoS2) is a transition metal dichalcogenide, which along with graphene, has a great potential to become a material of choice for the next generation of nanoelectronics. We report the synthesis of a large-area MoS2 obtained by sulfurization of MoO3 using chemical vapor deposition (CVD) at different Ar base pressures. The optimal pressure for the growth was found to be ∼50 mbar (millibar). The evolution of MoS2 phase as a function of Ar gas pressure was monitored by confocal Raman spectroscopy. As synthesized MoS2 shows direct bandgap of 1.6 eV evaluated by UV–vis spectroscopy. We report for the first time the valence band spectra and the work function of MoS2 on SiO2/Si calculated by ultraviolet photoemission spectroscopy, which was found to be 4.67 eV. In-situ electrical measurements demonstrated expected semiconducting behavior of the grown triangular crystals. These studies show MoS2 crystallites growth by controlling the parameters in CVD process.",

keywords = "Chemical vapor deposition (CVD), HR-XPS, MoS, Transition metal dichalcogenides (TMDs), UV–visible",

author = "Sharma, \{Dhananjay K.\} and Ramana, \{E. Venkata\} and Sara Fateixa and Hortig{\"u}ela, \{Mar{\'i}a J.\} and Gonzalo Otero-Irurueta and Nogueira, \{Helena I.S.\} and Andrei Kholkin",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2018",

month = jan,

doi = "10.1016/j.materresbull.2017.09.007",

language = "English",

volume = "97",

pages = "265--271",

journal = "Materials Research Bulletin",

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T1 - Pressure-dependent large area synthesis and electronic structure of MoS2

AU - Sharma, Dhananjay K.

AU - Ramana, E. Venkata

AU - Fateixa, Sara

AU - Hortigüela, María J.

AU - Otero-Irurueta, Gonzalo

AU - Nogueira, Helena I.S.

AU - Kholkin, Andrei

PY - 2018/1

Y1 - 2018/1

N2 - Molybdenum disulfide (MoS2) is a transition metal dichalcogenide, which along with graphene, has a great potential to become a material of choice for the next generation of nanoelectronics. We report the synthesis of a large-area MoS2 obtained by sulfurization of MoO3 using chemical vapor deposition (CVD) at different Ar base pressures. The optimal pressure for the growth was found to be ∼50 mbar (millibar). The evolution of MoS2 phase as a function of Ar gas pressure was monitored by confocal Raman spectroscopy. As synthesized MoS2 shows direct bandgap of 1.6 eV evaluated by UV–vis spectroscopy. We report for the first time the valence band spectra and the work function of MoS2 on SiO2/Si calculated by ultraviolet photoemission spectroscopy, which was found to be 4.67 eV. In-situ electrical measurements demonstrated expected semiconducting behavior of the grown triangular crystals. These studies show MoS2 crystallites growth by controlling the parameters in CVD process.

AB - Molybdenum disulfide (MoS2) is a transition metal dichalcogenide, which along with graphene, has a great potential to become a material of choice for the next generation of nanoelectronics. We report the synthesis of a large-area MoS2 obtained by sulfurization of MoO3 using chemical vapor deposition (CVD) at different Ar base pressures. The optimal pressure for the growth was found to be ∼50 mbar (millibar). The evolution of MoS2 phase as a function of Ar gas pressure was monitored by confocal Raman spectroscopy. As synthesized MoS2 shows direct bandgap of 1.6 eV evaluated by UV–vis spectroscopy. We report for the first time the valence band spectra and the work function of MoS2 on SiO2/Si calculated by ultraviolet photoemission spectroscopy, which was found to be 4.67 eV. In-situ electrical measurements demonstrated expected semiconducting behavior of the grown triangular crystals. These studies show MoS2 crystallites growth by controlling the parameters in CVD process.

KW - Chemical vapor deposition (CVD)

KW - HR-XPS

KW - MoS

KW - Transition metal dichalcogenides (TMDs)

KW - UV–visible

UR - https://www.scopus.com/pages/publications/85029186484

U2 - 10.1016/j.materresbull.2017.09.007

DO - 10.1016/j.materresbull.2017.09.007

M3 - Article

AN - SCOPUS:85029186484

SN - 0025-5408

VL - 97

SP - 265

EP - 271

JO - Materials Research Bulletin

JF - Materials Research Bulletin

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