Processing of amorphous Si by pulsed laser irradiation at different wavelengths

J. Butikova; G. Marcins; B. Polyakov; A. Muhins; A. Voitkans; I. Tale

doi:10.1088/1757-899X/38/1/012009

Processing of amorphous Si by pulsed laser irradiation at different wavelengths

J. Butikova^*
, G. Marcins
, B. Polyakov
, A. Muhins
, A. Voitkans
, I. Tale

^*Šī darba korespondējošais autors

University of Latvia

Zinātniskās darbības rezultāts: Devums žurnālam › Konferences zinātniskais raksts › koleģiāli recenzēts

Kopsavilkums

Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2^nd and 3^rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm² for the 2^nd harmonics and 155 mJ/cm² for the 3^rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 μm.

Oriģinālvaloda	Angļu
Raksta numurs	012009
Žurnāls	IOP Conference Series: Materials Science and Engineering
Sējums	38
Izdevuma numurs	1
DOIs	https://doi.org/10.1088/1757-899X/38/1/012009
Publikācijas statuss	Publicēts - 2012
Pasākums	International Conference on Functional Materials and Nanotechnologies, FM and NT 2012 - Riga, Latvija Ilgums: 17 apr. 2012 → 20 apr. 2012

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title = "Processing of amorphous Si by pulsed laser irradiation at different wavelengths",

abstract = "Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2nd and 3rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm2 for the 2nd harmonics and 155 mJ/cm2 for the 3rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 μm.",

author = "J. Butikova and G. Marcins and B. Polyakov and A. Muhins and A. Voitkans and I. Tale",

year = "2012",

doi = "10.1088/1757-899X/38/1/012009",

language = "English",

volume = "38",

journal = "IOP Conference Series: Materials Science and Engineering",

issn = "1757-8981",

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note = "International Conference on Functional Materials and Nanotechnologies, FM and NT 2012 ; Conference date: 17-04-2012 Through 20-04-2012",

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TY - JOUR

T1 - Processing of amorphous Si by pulsed laser irradiation at different wavelengths

AU - Butikova, J.

AU - Marcins, G.

AU - Polyakov, B.

AU - Muhins, A.

AU - Voitkans, A.

AU - Tale, I.

PY - 2012

Y1 - 2012

N2 - Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2nd and 3rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm2 for the 2nd harmonics and 155 mJ/cm2 for the 3rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 μm.

AB - Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2nd and 3rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm2 for the 2nd harmonics and 155 mJ/cm2 for the 3rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 μm.

UR - https://www.scopus.com/pages/publications/84874028565

UR - https://iopscience.iop.org/article/10.1088/1757-899X/38/1/012009

U2 - 10.1088/1757-899X/38/1/012009

DO - 10.1088/1757-899X/38/1/012009

M3 - Conference article

AN - SCOPUS:84874028565

SN - 1757-8981

VL - 38

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

M1 - 012009

T2 - International Conference on Functional Materials and Nanotechnologies, FM and NT 2012

Y2 - 17 April 2012 through 20 April 2012

ER -

Processing of amorphous Si by pulsed laser irradiation at different wavelengths

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