PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.

Yu M. Gel'fgat; E. S. Levshin; A. I. Pogodin; Z. A. Sal'nik; B. V. Smirnov; A. M. Eidenzon

PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.

Yu M. Gel'fgat^*
, E. S. Levshin
, A. I. Pogodin
, Z. A. Sal'nik
, B. V. Smirnov
, A. M. Eidenzon

^*Šī darba korespondējošais autors

Eksakto zinātņu un tehnoloģiju fakultāte

Zinātniskās darbības rezultāts: Devums biznesa/profesionālā publikācijā › Raksts (biznesa/profesionālajos izdevumos) › Pētniecība

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The possibility of obtaining 100-mm-diam silicon single crystals with a low oxygen content (up to 2 multiplied by (times) 10**1**7 cm** minus **3) at relatively low magnetic field strengths is shown. In crystals grown under magnetohyrodynamic action, a more ordered distribution of microdefects is formed, which is attributed to the nature of the temperature fluctuations in the melt. The electrical and structural parameters of these crystals are thermally stable.

Oriģinālvaloda	Angļu
Lapas	72-76
Lapu skaits	5
Nr.	7
Specializētā publikācija	Tsvetnye Metally
Publikācijas statuss	Publicēts - jūl. 1987

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@misc{71e39f6bb1014854bee154dd3b68240c,

title = "PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.",

abstract = "The possibility of obtaining 100-mm-diam silicon single crystals with a low oxygen content (up to 2 multiplied by (times) 10**1**7 cm** minus **3) at relatively low magnetic field strengths is shown. In crystals grown under magnetohyrodynamic action, a more ordered distribution of microdefects is formed, which is attributed to the nature of the temperature fluctuations in the melt. The electrical and structural parameters of these crystals are thermally stable.",

author = "Gel'fgat, \{Yu M.\} and Levshin, \{E. S.\} and Pogodin, \{A. I.\} and Sal'nik, \{Z. A.\} and Smirnov, \{B. V.\} and Eidenzon, \{A. M.\}",

year = "1987",

month = jul,

language = "English",

pages = "72--76",

journal = "Tsvetnye Metally",

issn = "0372-2929",

publisher = "Ore and Metals Publishing house",

}

TY - GEN

T1 - PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.

AU - Gel'fgat, Yu M.

AU - Levshin, E. S.

AU - Pogodin, A. I.

AU - Sal'nik, Z. A.

AU - Smirnov, B. V.

AU - Eidenzon, A. M.

PY - 1987/7

Y1 - 1987/7

N2 - The possibility of obtaining 100-mm-diam silicon single crystals with a low oxygen content (up to 2 multiplied by (times) 10**1**7 cm** minus **3) at relatively low magnetic field strengths is shown. In crystals grown under magnetohyrodynamic action, a more ordered distribution of microdefects is formed, which is attributed to the nature of the temperature fluctuations in the melt. The electrical and structural parameters of these crystals are thermally stable.

AB - The possibility of obtaining 100-mm-diam silicon single crystals with a low oxygen content (up to 2 multiplied by (times) 10**1**7 cm** minus **3) at relatively low magnetic field strengths is shown. In crystals grown under magnetohyrodynamic action, a more ordered distribution of microdefects is formed, which is attributed to the nature of the temperature fluctuations in the melt. The electrical and structural parameters of these crystals are thermally stable.

UR - https://www.scopus.com/pages/publications/0023381372

M3 - Specialist article/Article in trade journal

AN - SCOPUS:0023381372

SN - 0372-2929

SP - 72

EP - 76

JO - Tsvetnye Metally

JF - Tsvetnye Metally

ER -

PROPERTIES OF SILICON CRYSTALS GROWN UNDER THE ACTION OF A VERTICAL MAGNETIC FIELD.

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