Quenching of photoconduction in semiconductors with pulsating recombination activity

S. Zh Karazhanov

doi:10.1134/1.1262105

Quenching of photoconduction in semiconductors with pulsating recombination activity

S. Zh Karazhanov^*

^*Šī darba korespondējošais autors

Academy of Sciences of the Republic of Uzbekistan

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

1 Atsauce (Scopus)

Kopsavilkums

A new mechanism is proposed for the quenching of photoconduction and a negative internal photoeffect caused by the metastable nature of defects.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	398-399
Lapu skaits	2
Žurnāls	Technical Physics Letters
Sējums	24
Izdevuma numurs	5
DOIs	https://doi.org/10.1134/1.1262105
Publikācijas statuss	Publicēts - maijs 1998
Ārēji publicēts	Jā

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title = "Quenching of photoconduction in semiconductors with pulsating recombination activity",

abstract = "A new mechanism is proposed for the quenching of photoconduction and a negative internal photoeffect caused by the metastable nature of defects.",

author = "Karazhanov, \{S. Zh\}",

year = "1998",

month = may,

doi = "10.1134/1.1262105",

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volume = "24",

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journal = "Technical Physics Letters",

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T1 - Quenching of photoconduction in semiconductors with pulsating recombination activity

AU - Karazhanov, S. Zh

PY - 1998/5

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N2 - A new mechanism is proposed for the quenching of photoconduction and a negative internal photoeffect caused by the metastable nature of defects.

AB - A new mechanism is proposed for the quenching of photoconduction and a negative internal photoeffect caused by the metastable nature of defects.

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DO - 10.1134/1.1262105

M3 - Article

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VL - 24

SP - 398

EP - 399

JO - Technical Physics Letters

JF - Technical Physics Letters

IS - 5

ER -

Quenching of photoconduction in semiconductors with pulsating recombination activity

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