Recombination Luminescence and Electron–Hole Trapping Centers in BaSO₄-Bi Phosphor

This study of the BaSO₄-Bi phosphor has revealed that the accumulated energy after external optical excitation exhibits specific characteristics. During irradiation with photon energy exceeding the bandgap, in addition to the intrinsic ultraviolet emission of the Bi³⁺ ion, several recombination emissions and emission from the Bi²⁺ ion are observed. At 80 K, the recombination luminescence states and Bi²⁺ ion emission form combined electronic states. Upon heating of the BaSO₄-Bi phosphor, these combined electronic states decay into recombination emissions at 2.34 eV, 2.4 eV, 3.1 eV, and 2.7 eV, as well as Bi²⁺ ion emission at 1.97 eV. It is assumed that the 2.34 eV, 2.4 eV, and 3.1 eV emissions are associated with the recombination of electrons released from ionized (Formula presented.) electron trapping centers with nonequivalently localized holes in the host lattice. The 2.7 eV emission is attributed to the decay of an exciton formed by electron–hole recombination near a Bi³⁺ ion.