Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass

Koichi Kajihara; Linards Skuja; Masahiro Hirano; Hideo Hosono

Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO₂ Glass

Koichi Kajihara^*
, Linards Skuja
, Masahiro Hirano
, Hideo Hosono

^*Šī darba korespondējošais autors

Optisko materiālu laboratorija, Cietvielu fizikas institūts

Japan Science and Technology Agency
Institute of Science Tokyo

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

44 Atsauces (Scopus)

Kopsavilkums

The demonstration of role of mobile interstitial oxygen atoms (O ⁰) in defect processes in oxides by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO₂ glass was presented. It was found tha superstoichiometric O⁰ was created by the oxygen dangling bond to POR. Exposure to 5.0 eV light converted POR back to a pair of the oxygen dangling bond and O⁰. Analysis suggests that various defect processes typically occurring in SiO₂ glass at ∼300-500°C were related to the migration.

Oriģinālvaloda	Angļu
Raksta numurs	015504
Lapas (no-līdz)	155041-155044
Lapu skaits	4
Žurnāls	Physical Review Letters
Sējums	92
Izdevuma numurs	1
Publikācijas statuss	Publicēts - 9 janv. 2004

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title = "Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass",

abstract = "The demonstration of role of mobile interstitial oxygen atoms (O 0) in defect processes in oxides by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass was presented. It was found tha superstoichiometric O0 was created by the oxygen dangling bond to POR. Exposure to 5.0 eV light converted POR back to a pair of the oxygen dangling bond and O0. Analysis suggests that various defect processes typically occurring in SiO2 glass at ∼300-500°C were related to the migration.",

author = "Koichi Kajihara and Linards Skuja and Masahiro Hirano and Hideo Hosono",

year = "2004",

month = jan,

day = "9",

language = "English",

volume = "92",

pages = "155041--155044",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "1",

}

Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO₂ Glass. / Kajihara, Koichi; Skuja, Linards; Hirano, Masahiro u.c.
(gadā): Physical Review Letters, Sēj. 92, Nr. 1, 015504, 09.01.2004, lpp. 155041-155044.

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

TY - JOUR

T1 - Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides

T2 - Interconversion between Oxygen-Associated Defects in SiO2 Glass

AU - Kajihara, Koichi

AU - Skuja, Linards

AU - Hirano, Masahiro

AU - Hosono, Hideo

PY - 2004/1/9

Y1 - 2004/1/9

N2 - The demonstration of role of mobile interstitial oxygen atoms (O 0) in defect processes in oxides by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass was presented. It was found tha superstoichiometric O0 was created by the oxygen dangling bond to POR. Exposure to 5.0 eV light converted POR back to a pair of the oxygen dangling bond and O0. Analysis suggests that various defect processes typically occurring in SiO2 glass at ∼300-500°C were related to the migration.

AB - The demonstration of role of mobile interstitial oxygen atoms (O 0) in defect processes in oxides by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass was presented. It was found tha superstoichiometric O0 was created by the oxygen dangling bond to POR. Exposure to 5.0 eV light converted POR back to a pair of the oxygen dangling bond and O0. Analysis suggests that various defect processes typically occurring in SiO2 glass at ∼300-500°C were related to the migration.

UR - https://www.scopus.com/pages/publications/1242284702

M3 - Article

AN - SCOPUS:1242284702

SN - 0031-9007

VL - 92

SP - 155041

EP - 155044

JO - Physical Review Letters

JF - Physical Review Letters

IS - 1

M1 - 015504

ER -

Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass

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Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO₂ Glass