Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

A. Sh Davletova; S. Zh Karazhanov

doi:10.1134/S002016850911003X

Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

A. Sh Davletova
, S. Zh Karazhanov

Academy of Sciences of the Republic of Uzbekistan
Institute for Energy Technology

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

Kopsavilkums

In this work it is shown that the dislocation engineered Si p-n junctions are sensitive to variations of illumination intensity. It is found that with the aim of ultrasound processing it is possible to purposefully modulate properties of the device structure.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	1213-1216
Lapu skaits	4
Žurnāls	Inorganic Materials
Sējums	45
Izdevuma numurs	11
DOIs	https://doi.org/10.1134/S002016850911003X
Publikācijas statuss	Publicēts - nov. 2009
Ārēji publicēts	Jā

Piekļuve Dokumentiem

10.1134/S002016850911003X

Citi faili un saites

Saite uz publikāciju Scopus

Citēt šo

@article{76213b16efa64d79bb45a976f943a448,

title = "Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound",

abstract = "In this work it is shown that the dislocation engineered Si p-n junctions are sensitive to variations of illumination intensity. It is found that with the aim of ultrasound processing it is possible to purposefully modulate properties of the device structure.",

author = "Davletova, \{A. Sh\} and Karazhanov, \{S. Zh\}",

year = "2009",

month = nov,

doi = "10.1134/S002016850911003X",

language = "English",

volume = "45",

pages = "1213--1216",

journal = "Inorganic Materials",

issn = "0020-1685",

publisher = "Pleiades Publishing",

number = "11",

}

TY - JOUR

T1 - Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

AU - Davletova, A. Sh

AU - Karazhanov, S. Zh

PY - 2009/11

Y1 - 2009/11

N2 - In this work it is shown that the dislocation engineered Si p-n junctions are sensitive to variations of illumination intensity. It is found that with the aim of ultrasound processing it is possible to purposefully modulate properties of the device structure.

AB - In this work it is shown that the dislocation engineered Si p-n junctions are sensitive to variations of illumination intensity. It is found that with the aim of ultrasound processing it is possible to purposefully modulate properties of the device structure.

UR - https://www.scopus.com/pages/publications/70449624061

U2 - 10.1134/S002016850911003X

DO - 10.1134/S002016850911003X

M3 - Article

AN - SCOPUS:70449624061

SN - 0020-1685

VL - 45

SP - 1213

EP - 1216

JO - Inorganic Materials

JF - Inorganic Materials

IS - 11

ER -

Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

Kopsavilkums

Piekļuve Dokumentiem

Citi faili un saites

Nospiedums

Citēt šo