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Simulation of oxidized silicon stripe formation on Pd(111)

  • Center for Physical Sciences and Technology

Zinātniskās darbības rezultāts: Devums žurnālamKonferences zinātniskais rakstskoleģiāli recenzēts

Kopsavilkums

We propose the model with two interaction constants (nearest neighbour pair repulsion of SiO complexes and their trio attraction in a line) which demonstrates stripe formation during silane decomposition on oxidized Pd(111) surface. The simplest (2 × 1) stripe phase is obtained by kinetic Monte Carlo simulation in absence of longer-range attractive interactions which are usually necessary for stripe structure formation. Despite higher energy, this phase is shown to be very stable. Phase diagram for this model is obtained, and (2 × 1) phase stability is analyzed varying coverage and reaction rate parameters.

OriģinālvalodaAngļu
Lapas (no-līdz)2731-2733
Lapu skaits3
ŽurnālsPhysica Status Solidi (C) Current Topics in Solid State Physics
Sējums6
Izdevuma numurs12
DOIs
Publikācijas statussPublicēts - 2009
Pasākums15th International Semiconducting and Insulating Materials Conference, SIMC-XV - Vilnius, Lietuva
Ilgums: 15 jūn. 200919 jūn. 2009

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