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Simulation of the influence of gas flow on melt convection and phase boundaries in FZ silicon single crystal growth

Zinātniskās darbības rezultāts: Devums žurnālamZinātniskais raksts (žurnālā)koleģiāli recenzēts

15 Atsauces (Scopus)

Kopsavilkums

Axisymmetric calculations of inert gas flow in a floating zone puller are carried out using an open source software package OpenFOAM. Transient axisymmetric melt flow in liquid silicon and quasi-stationary shape of silicon phase boundaries are calculated using a specialized program FZone. Additional heat losses at silicon surfaces caused by the gas flow are taken into account for argon and helium, while maintaining the height of molten zone by adjusting inductor current. Cooling causes an increase of electromagnetic force, heat sources and more intense melt flow, while crystallization interface deflection decreases. The shear stress of gas flow is found to be an order of magnitude weaker than electromagnetic and Marangoni forces.

OriģinālvalodaAngļu
Raksta numurs22365
Lapas (no-līdz)51-57
Lapu skaits7
ŽurnālsJournal of Crystal Growth
Sējums417
DOIs
Publikācijas statussPublicēts - 1 maijs 2015

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