Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates

K. G. Brooks; M. Kohli; D. V. Taylor; T. Maeder; I. Reaney; A. Kholkin; P. Muralt; N. Setter

Sol-gel deposition of PZT thin films on ceramic ZrO₂ substrates

K. G. Brooks^*
, M. Kohli
, D. V. Taylor
, T. Maeder
, I. Reaney
, A. Kholkin
, P. Muralt
, N. Setter

^*Šī darba korespondējošais autors

Lab de Ceramique

Zinātniskās darbības rezultāts: Devums konferencē › Konferences raksts › koleģiāli recenzēts

5 Atsauces (Scopus)

Kopsavilkums

Pb(Zr_1-xTi_x)O₃ thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO₂ ceramic substrates by a sol-gel method. The high thermal expansion of ZrO₂ relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P-E hysteresis loops were obtained with: P_r = 36 μC/cm², and E_c = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 μm thick Pb(Zr_0.15Ti_0.85)O₃ film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties.

Oriģinālvaloda	Angļu
Lapas	611-614
Lapu skaits	4
Publikācijas statuss	Publicēts - 1996
Ārēji publicēts	Jā
Pasākums	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Ilgums: 18 aug. 1996 → 21 aug. 1996

Konference

Konference	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
Pilsēta	East Brunswick, NJ, USA
Periods	18/08/96 → 21/08/96

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Saite uz publikāciju Scopus

Citēt šo

@conference{e0ed5dd24a4e44caab5ffd6466144966,

title = "Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates",

abstract = "Pb(Zr1-xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P-E hysteresis loops were obtained with: Pr = 36 μC/cm2, and Ec = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 μm thick Pb(Zr0.15Ti0.85)O3 film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties.",

author = "Brooks, \{K. G.\} and M. Kohli and Taylor, \{D. V.\} and T. Maeder and I. Reaney and A. Kholkin and P. Muralt and N. Setter",

year = "1996",

language = "English",

pages = "611--614",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

Sol-gel deposition of PZT thin films on ceramic ZrO₂ substrates. / Brooks, K. G.; Kohli, M.; Taylor, D. V. u.c.
1996. 611-614 Pētnieciskais darbs prezentēts Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA.

Zinātniskās darbības rezultāts: Devums konferencē › Konferences raksts › koleģiāli recenzēts

TY - CONF

T1 - Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates

AU - Brooks, K. G.

AU - Kohli, M.

AU - Taylor, D. V.

AU - Maeder, T.

AU - Reaney, I.

AU - Kholkin, A.

AU - Muralt, P.

AU - Setter, N.

PY - 1996

Y1 - 1996

N2 - Pb(Zr1-xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P-E hysteresis loops were obtained with: Pr = 36 μC/cm2, and Ec = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 μm thick Pb(Zr0.15Ti0.85)O3 film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties.

AB - Pb(Zr1-xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P-E hysteresis loops were obtained with: Pr = 36 μC/cm2, and Ec = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 μm thick Pb(Zr0.15Ti0.85)O3 film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties.

UR - https://www.scopus.com/pages/publications/0030359929

M3 - Paper

AN - SCOPUS:0030359929

SP - 611

EP - 614

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -