Stable and transient color centers in Gd3Ga5O 12 crystals

A. Matkovskii; P. Potera; D. Sugak; L. Grigorjeva; D. Millers; V. Pankratov; A. Suchocki

doi:10.1002/crat.200310254

Stable and transient color centers in Gd₃Ga₅O ₁₂ crystals

A. Matkovskii
, P. Potera^*
, D. Sugak
, L. Grigorjeva
, D. Millers
, V. Pankratov
, A. Suchocki

^*Šī darba korespondējošais autors

Spektroskopijas laboratorija, Cietvielu fizikas institūts

University of Rzeszów
Lviv Polytechnic National University
R and D Inst. for Mat. SRC Carat
University of Latvia
Institute of Physics of the Polish Academy of Sciences

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

30 Atsauces (Scopus)

Kopsavilkums

The work is devoted to investigation of stable color centers (CC) that are created in Gd₃Ga₅O₁₂ (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 10⁵ Gy) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 10¹² cm^-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca²⁺ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	788-795
Lapu skaits	8
Žurnāls	Crystal Research and Technology
Sējums	39
Izdevuma numurs	9
DOIs	https://doi.org/10.1002/crat.200310254
Publikācijas statuss	Publicēts - sept. 2004

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10.1002/crat.200310254

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title = "Stable and transient color centers in Gd3Ga5O 12 crystals",

abstract = "The work is devoted to investigation of stable color centers (CC) that are created in Gd3Ga5O12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 105 Gy) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 1012 cm-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.",

keywords = "Color centers, Gamma irradaiation, GdGaO, Optical absorption",

author = "A. Matkovskii and P. Potera and D. Sugak and L. Grigorjeva and D. Millers and V. Pankratov and A. Suchocki",

year = "2004",

month = sep,

doi = "10.1002/crat.200310254",

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T1 - Stable and transient color centers in Gd3Ga5O 12 crystals

AU - Matkovskii, A.

AU - Potera, P.

AU - Sugak, D.

AU - Grigorjeva, L.

AU - Millers, D.

AU - Pankratov, V.

AU - Suchocki, A.

PY - 2004/9

Y1 - 2004/9

N2 - The work is devoted to investigation of stable color centers (CC) that are created in Gd3Ga5O12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 105 Gy) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 1012 cm-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.

AB - The work is devoted to investigation of stable color centers (CC) that are created in Gd3Ga5O12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 105 Gy) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 1012 cm-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.

KW - Color centers

KW - Gamma irradaiation

KW - GdGaO

KW - Optical absorption

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