Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering

Martins Zubkins; Roberts Kalendarev; Jevgenijs Gabrusenoks; Kaspars Vilnis; Andris Azens; Juris Purans

doi:10.1002/pssc.201300653

Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering

Martins Zubkins^*
, Roberts Kalendarev
, Jevgenijs Gabrusenoks
, Kaspars Vilnis
, Andris Azens
, Juris Purans

^*Šī darba korespondējošais autors

University of Latvia

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

9 Atsauces (Scopus)

Kopsavilkums

ZnO-IrO₂ thin films were deposited on glass by DC reactive magnetron sputtering at room temperature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentration in the films. XRD data shows that ZnO-IrO₂ thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO₂, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10^-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	1493-1496
Lapu skaits	4
Žurnāls	Physica Status Solidi (C) Current Topics in Solid State Physics
Sējums	11
Izdevuma numurs	9-10
DOIs	https://doi.org/10.1002/pssc.201300653
Publikācijas statuss	Publicēts - sept. 2014

OECD Zinātnes nozare

1.3 Fizika un astronomija

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@article{08e871b088a34fd595b78456f735fc24,

title = "Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering",

abstract = "ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room temperature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentration in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33\% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.",

keywords = "DC magnetron sputtering, Reactive process, Thin films, Zinc-iridium oxide",

author = "Martins Zubkins and Roberts Kalendarev and Jevgenijs Gabrusenoks and Kaspars Vilnis and Andris Azens and Juris Purans",

note = "Publisher Copyright: {\textcopyright} 2014 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2014",

month = sep,

doi = "10.1002/pssc.201300653",

language = "English",

volume = "11",

pages = "1493--1496",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "9-10",

}

Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering. / Zubkins, Martins; Kalendarev, Roberts; Gabrusenoks, Jevgenijs u.c.
(gadā): Physica Status Solidi (C) Current Topics in Solid State Physics, Sēj. 11, Nr. 9-10, 09.2014, lpp. 1493-1496.

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

TY - JOUR

T1 - Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering

AU - Zubkins, Martins

AU - Kalendarev, Roberts

AU - Gabrusenoks, Jevgenijs

AU - Vilnis, Kaspars

AU - Azens, Andris

AU - Purans, Juris

PY - 2014/9

Y1 - 2014/9

N2 - ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room temperature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentration in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.

AB - ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room temperature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentration in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.

KW - DC magnetron sputtering

KW - Reactive process

KW - Thin films

KW - Zinc-iridium oxide

UR - https://www.scopus.com/pages/publications/84908076245

U2 - 10.1002/pssc.201300653

DO - 10.1002/pssc.201300653

M3 - Article

AN - SCOPUS:84908076245

SN - 1862-6351

VL - 11

SP - 1493

EP - 1496

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 9-10

ER -

Structural, electrical and optical properties of zinc-iridium oxide thin films deposited by DC reactive magnetron sputtering

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