@inproceedings{e733fdf1cb5e40c6b7c9600f4feea71d,
title = "Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers",
abstract = "This study investigates porous gallium arsenide's structural and morphological properties. Based on EDX analysis data, it is established that Ga and As dominate the material composition, indicating its consistency with gallium arsenide, while there is a limited presence of oxygen. SEM analysis revealed a uniform distribution of pores on the surface, forming intricate tracks and chains. Although por-GaAs possess a porous structure, their crystalline properties, as demonstrated through XRD-spectroscopy, remain preserved and are similar to monocrystalline GaAs. The spectroscopic analysis detected vibrational processes characteristic of GaAs and features associated with the porosity and structure of por-GaAs.",
keywords = "electrochemical etching, Gallium arsenide, morphology, por-GaAs, Raman investigation, XRD-spectroscopy",
author = "Yana Suchikova and Sergii Kovachov and Zhakyp Karipbaev and Ihor Bohdanov and Anastasiia Lysak and Anatolijs Popovs",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",
year = "2023",
doi = "10.1109/ELIT61488.2023.10311022",
language = "English",
isbn = "979-8-3503-8310-2",
series = "2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings",
pages = "330--334",
booktitle = "2023 IEEE 13th International Conference on Electronics and Information Technologies, ELIT 2023 - Proceedings",
}