Structural investigation of crystallized Ge-Ga-Se chalcogenide glasses

H. Klym; O. Shpotyuk; I. Karbovnyk; L. Calvez; A. I. Popov

doi:10.1088/1757-899X/503/1/012020

Structural investigation of crystallized Ge-Ga-Se chalcogenide glasses

H. Klym
, O. Shpotyuk
, I. Karbovnyk
, L. Calvez
, A. I. Popov

Pašorganizēto sistēmu kinētikas laboratorija, Cietvielu fizikas institūts

Lviv Polytechnic National University
Vlokh Institute of Physical Optics
Jan Dlugosz University in Czestochowa
Ivan Franko National University of L'viv
Université de Rennes

Zinātniskās darbības rezultāts: Devums žurnālam › Konferences zinātniskais raksts › koleģiāli recenzēts

3 Atsauces (Scopus)

Kopsavilkums

Crystallization transformation in the 80GeSe₂-20Ga₂Se₃ chalcogenide glasses caused by annealing at 380 °C during different duration (25, 50, 80 and 100 hours) are studied using X-ray diffraction and atomic force microscopy methods. It is established that GeGa₄Se phase of low- and high-temperature modification, Ga₂Se₃ phase (α- and γ-modification) and GeSe₂ phases are crystallized during this process. It is shown that annealing duration over 50 h does not lead to further internal structural crystallization, while annealing for 80 h result in processes of surface crystallization.

Oriģinālvaloda	Angļu
Raksta numurs	012020
Žurnāls	IOP Conference Series: Materials Science and Engineering
Sējums	503
Izdevuma numurs	1
DOIs	https://doi.org/10.1088/1757-899X/503/1/012020
Publikācijas statuss	Publicēts - 25 marts 2019
Pasākums	12th International Scientific Conference on Functional Materials and Nanotechnologies, FM and NT 2018 - Riga, Latvija Ilgums: 2 okt. 2018 → 5 okt. 2018

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@article{f2f8f210610247ed9e29df68472644b4,

title = "Structural investigation of crystallized Ge-Ga-Se chalcogenide glasses",

abstract = "Crystallization transformation in the 80GeSe2-20Ga2Se3 chalcogenide glasses caused by annealing at 380 °C during different duration (25, 50, 80 and 100 hours) are studied using X-ray diffraction and atomic force microscopy methods. It is established that GeGa4Se phase of low- and high-temperature modification, Ga2Se3 phase (α- and γ-modification) and GeSe2 phases are crystallized during this process. It is shown that annealing duration over 50 h does not lead to further internal structural crystallization, while annealing for 80 h result in processes of surface crystallization.",

author = "H. Klym and O. Shpotyuk and I. Karbovnyk and L. Calvez and Popov, \{A. I.\}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 12th International Scientific Conference on Functional Materials and Nanotechnologies, FM and NT 2018 ; Conference date: 02-10-2018 Through 05-10-2018",

year = "2019",

month = mar,

day = "25",

doi = "10.1088/1757-899X/503/1/012020",

language = "English",

volume = "503",

journal = "IOP Conference Series: Materials Science and Engineering",

issn = "1757-8981",

publisher = "IOP Publishing Ltd.",

number = "1",

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TY - JOUR

T1 - Structural investigation of crystallized Ge-Ga-Se chalcogenide glasses

AU - Klym, H.

AU - Shpotyuk, O.

AU - Karbovnyk, I.

AU - Calvez, L.

AU - Popov, A. I.

PY - 2019/3/25

Y1 - 2019/3/25

N2 - Crystallization transformation in the 80GeSe2-20Ga2Se3 chalcogenide glasses caused by annealing at 380 °C during different duration (25, 50, 80 and 100 hours) are studied using X-ray diffraction and atomic force microscopy methods. It is established that GeGa4Se phase of low- and high-temperature modification, Ga2Se3 phase (α- and γ-modification) and GeSe2 phases are crystallized during this process. It is shown that annealing duration over 50 h does not lead to further internal structural crystallization, while annealing for 80 h result in processes of surface crystallization.

AB - Crystallization transformation in the 80GeSe2-20Ga2Se3 chalcogenide glasses caused by annealing at 380 °C during different duration (25, 50, 80 and 100 hours) are studied using X-ray diffraction and atomic force microscopy methods. It is established that GeGa4Se phase of low- and high-temperature modification, Ga2Se3 phase (α- and γ-modification) and GeSe2 phases are crystallized during this process. It is shown that annealing duration over 50 h does not lead to further internal structural crystallization, while annealing for 80 h result in processes of surface crystallization.

UR - https://www.scopus.com/pages/publications/85064865083

U2 - 10.1088/1757-899X/503/1/012020

DO - 10.1088/1757-899X/503/1/012020

M3 - Conference article

AN - SCOPUS:85064865083

SN - 1757-8981

VL - 503

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

M1 - 012020

T2 - 12th International Scientific Conference on Functional Materials and Nanotechnologies, FM and NT 2018

Y2 - 2 October 2018 through 5 October 2018

ER -

Structural investigation of crystallized Ge-Ga-Se chalcogenide glasses

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