Structure and characteristics of laser crystallized thin amorphous Si films

Guntis Marcins; Mikhail Chubarov; Jelena Butikova; Ivars Tale; Boris Polyakov; Robert Kalendarjov; Aleksej Muhin; Georgy Chikvaidze; Pavel Birjukov

doi:10.1016/j.egypro.2011.01.007

Structure and characteristics of laser crystallized thin amorphous Si films

Guntis Marcins^*
, Mikhail Chubarov
, Jelena Butikova
, Ivars Tale
, Boris Polyakov
, Robert Kalendarjov
, Aleksej Muhin
, Georgy Chikvaidze
, Pavel Birjukov

^*Šī darba korespondējošais autors

University of Latvia

Zinātniskās darbības rezultāts: Devums žurnālam › Konferences zinātniskais raksts › koleģiāli recenzēts

Kopsavilkums

Pure amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by picosecond UV laser pulses. The Raman scattering spectra show that pulse energy of 330 mJ/cm2 is enough to fully crystallize Si film and further increase of the energy does not improve crystallinity. A large grained polycrystalline Si was obtained as revealed by surface analysis. A significant increase in carrier mobility was observed after laser crystallization.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	42-45
Lapu skaits	4
Žurnāls	Energy Procedia
Sējums	3
DOIs	https://doi.org/10.1016/j.egypro.2011.01.007
Publikācijas statuss	Publicēts - 2011

OECD Zinātnes nozare

1.3 Fizika un astronomija

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10.1016/j.egypro.2011.01.007

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@article{a759d79bf4364cc0a8582a6b041a65fd,

title = "Structure and characteristics of laser crystallized thin amorphous Si films",

abstract = "Pure amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by picosecond UV laser pulses. The Raman scattering spectra show that pulse energy of 330 mJ/cm2 is enough to fully crystallize Si film and further increase of the energy does not improve crystallinity. A large grained polycrystalline Si was obtained as revealed by surface analysis. A significant increase in carrier mobility was observed after laser crystallization.",

keywords = "a-Si, AFM, Laser crystallization, p-Si, Raman scattering spectra",

author = "Guntis Marcins and Mikhail Chubarov and Jelena Butikova and Ivars Tale and Boris Polyakov and Robert Kalendarjov and Aleksej Muhin and Georgy Chikvaidze and Pavel Birjukov",

year = "2011",

doi = "10.1016/j.egypro.2011.01.007",

language = "English",

volume = "3",

pages = "42--45",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Structure and characteristics of laser crystallized thin amorphous Si films

AU - Marcins, Guntis

AU - Chubarov, Mikhail

AU - Butikova, Jelena

AU - Tale, Ivars

AU - Polyakov, Boris

AU - Kalendarjov, Robert

AU - Muhin, Aleksej

AU - Chikvaidze, Georgy

AU - Birjukov, Pavel

PY - 2011

Y1 - 2011

N2 - Pure amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by picosecond UV laser pulses. The Raman scattering spectra show that pulse energy of 330 mJ/cm2 is enough to fully crystallize Si film and further increase of the energy does not improve crystallinity. A large grained polycrystalline Si was obtained as revealed by surface analysis. A significant increase in carrier mobility was observed after laser crystallization.

AB - Pure amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by picosecond UV laser pulses. The Raman scattering spectra show that pulse energy of 330 mJ/cm2 is enough to fully crystallize Si film and further increase of the energy does not improve crystallinity. A large grained polycrystalline Si was obtained as revealed by surface analysis. A significant increase in carrier mobility was observed after laser crystallization.

KW - a-Si

KW - AFM

KW - Laser crystallization

KW - p-Si

KW - Raman scattering spectra

UR - https://www.scopus.com/pages/publications/79952741369

UR - https://www.sciencedirect.com/science/article/pii/S1876610211000087

U2 - 10.1016/j.egypro.2011.01.007

DO - 10.1016/j.egypro.2011.01.007

M3 - Conference article

AN - SCOPUS:79952741369

SN - 1876-6102

VL - 3

SP - 42

EP - 45

JO - Energy Procedia

JF - Energy Procedia

ER -

Structure and characteristics of laser crystallized thin amorphous Si films

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