Temperature dependence of F-centre accumulation efficiency in doped alkali halides

E. Kotomin; I. Täle; I. Fabrikant

doi:10.1088/0022-3719/10/15/024

Temperature dependence of F-centre accumulation efficiency in doped alkali halides

E. Kotomin^*
, I. Täle
, I. Fabrikant

^*Šī darba korespondējošais autors

University of Latvia

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

6 Atsauces (Scopus)

Kopsavilkums

A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F₂-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F₂ centres).

Oriģinālvaloda	Angļu
Raksta numurs	024
Lapas (no-līdz)	2903-2915
Lapu skaits	13
Žurnāls	Journal of Physics C: Solid State Physics
Sējums	10
Izdevuma numurs	15
DOIs	https://doi.org/10.1088/0022-3719/10/15/024
Publikācijas statuss	Publicēts - 1977

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@article{d46674fcfaec495eac6e8b6baecfe931,

title = "Temperature dependence of F-centre accumulation efficiency in doped alkali halides",

abstract = "A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F2-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F2 centres).",

author = "E. Kotomin and I. T{\"a}le and I. Fabrikant",

year = "1977",

doi = "10.1088/0022-3719/10/15/024",

language = "English",

volume = "10",

pages = "2903--2915",

journal = "Journal of Physics C: Solid State Physics",

issn = "0022-3719",

publisher = "Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Temperature dependence of F-centre accumulation efficiency in doped alkali halides

AU - Kotomin, E.

AU - Täle, I.

AU - Fabrikant, I.

PY - 1977

Y1 - 1977

N2 - A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F2-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F2 centres).

AB - A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F2-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F2 centres).

UR - https://www.scopus.com/pages/publications/36149039740

U2 - 10.1088/0022-3719/10/15/024

DO - 10.1088/0022-3719/10/15/024

M3 - Article

AN - SCOPUS:36149039740

SN - 0022-3719

VL - 10

SP - 2903

EP - 2915

JO - Journal of Physics C: Solid State Physics

JF - Journal of Physics C: Solid State Physics

IS - 15

M1 - 024

ER -

Temperature dependence of F-centre accumulation efficiency in doped alkali halides

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